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參數資料
| 型號： | IRHNA57163SE |
| 英文描述： | 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package |
| 中文描述： | 130V 100kRad高可靠性單N通道看到一貼片MOSFET的硬化- 2包 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 119K |
| 代理商： | IRHNA57163SE |
2
www.irf.com
IRHNB7064
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
75*
356
3.0
220
3.1
Test Conditions
—
—
—
—
—
V
nS
μC
T
j
= 25°C, IS = 75A, VGS = 0V
Tj = 25°C, IF = 75A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJ-PCB
Junction-to-PC board
Min Typ Max
—
—
—
1.6
Units
°C/W
Test Conditions
0.42
—
Soldered to a 1” sq. copper-clad board
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown — 0.056 — V/°C
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
Typ
— — V
Max Units
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
—
—
2.0
18
—
—
—
—
— 4.0 V
—
—
—
25
—
250
0.015
0.018
VGS = 12V, ID = 56A
VGS = 12V, ID = 75A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 56A
VDS= 48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 75A
VDS = 30V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
260
60
86
27
120
76
93
—
nC
VDD =30V, ID = 75A
VGS =12V, RG = 2.35
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4900
2800
860
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
*Current is limited by the internal wire diameter
Measured from the center of
drain pad to center of source pad
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