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參數資料
| 型號： | IRHNA57163SE |
| 英文描述： | 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package |
| 中文描述： | 130V 100kRad高可靠性單N通道看到一貼片MOSFET的硬化- 2包 |
| 文件頁數： | 5/8頁 |
| 文件大小： | 119K |
| 代理商： | IRHNA57163SE |
www.irf.com
5
Pre-Irradiation
IRHNB7064
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
50
Q , Total Gate Charge (nC)
100
150
200
250
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
35A
75A
V
= 12V
DS
V
= 30V
DS
V
= 48V
DS
1
10
100
1000
0.0
1.0
2.0
3.0
4.0
5.0
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
°
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25 C
°
J
C
V , Drain-to-Source Voltage (V)
D
I
100us
1ms
10ms
相關PDF資料 |
PDF描述 |
|---|---|
| IRHNA57260SE | 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package |
| IRHNA57264SE | 250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package |
| IRHNA5760SE | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 55A I(D) | SMT |
| IRHNA57Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHNA58Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRHNA57163SED | 制造商:International Rectifier 功能描述:130V 750.000A HEXFET RADHARD - Bulk |
| IRHNA57163SED/SLDC | 制造商:International Rectifier 功能描述:130V 750.000A HEXFET RADHARD - Bulk |
| IRHNA57163SESCSD | 制造商:International Rectifier 功能描述:DATAPACK/IRHNA57163SESCSD - Bulk |
| IRHNA57164SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHNA57260 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:200V, N-CHANNEL |
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