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參數資料
| 型號： | IRHNA58260 |
| 廠商： | International Rectifier |
| 英文描述： | 200V, N-CHANNEL |
| 中文描述： | 為200V，N溝道 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 107K |
| 代理商： | IRHNA58260 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
55
35
220
300
2.4
±20
380
55
30
9.2
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5s)
3.3 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
IRHNA57260
200V, N-CHANNEL
TECHNOLOGY
R
5
11/19/99
www.irf.com
1
SMD-2
Product Summary
Part Number Radiation Level R
DS(on)
IRHNA57260 100K Rads (Si) 0.038
IRHNA53260 300K Rads (Si) 0.038
IRHNA54260 600K Rads (Si) 0.038
IRHNA58260 1000K Rads (Si) 0.043
I
D
55A
55A
55A
55A
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Ceramic Package
n
Light Weight
For footnotes refer to the last page
PD - 91838C
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