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參數資料
| 型號： | IRHNA7264SE |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.110ohm, Id=34A) |
| 中文描述： | 晶體管N溝道（BVdss \u003d 250V，的Rds（on）\u003d 0.110ohm，身份證\u003d 34A條） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 127K |
| 代理商： | IRHNA7264SE |
Part Number
IRHNA7264SE
BV
DSS
250V
R
DS(on)
0.110
I
D
34A
Features:
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
I
Single Event Gate Rupture (SEGR) Hardened
I
Gamma Dot (Flash X-Ray) Hardened
I
Neutron Tolerant
I
Identical Pre- and Post-Electrical Test Conditions
I
Repetitive Avalanche Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
I
Surface Mount
I
Lightweight
I
I
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRHNA7264SE
Units
ID @ VGS = 12V, TC = 25
o
C
ID @ VGS = 12V, TC = 100
o
C
IDM
PD @ TC = 25
o
C
34
21
136
300
2.4
±20
500
34
30
4.0
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5 sec.)
3.3 (typical)
g
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
Provisional Data Sheet No. PD-9.1432A
Pre-Radiation
250Volt, 0.110
, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure.
Additionally, under
identical
pre- and post-radiation test
conditions, International Rectifier’s RAD HARD HEXFETs
retain
identical
electrical specifications up to 1 x 10
5
Rads (Si) total dose. No compensation in gate drive cir-
cuitry is required. These devices are also capable of
surviving transient ionization pulses as high as 1 x 10
12
Rads (Si)/Sec, and return to normal operation within a
few microseconds. Since the SEE process utilizes In-
ternational Rectifier’s patented HEXFET technology, the
user can expect the highest quality and reliability in the
industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits in space
and weapons environments.
Product Summary
o
C
A
IRHNA7264SE
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
Next Data Sheet
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