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參數資料
| 型號： | IRHY58130CM |
| 英文描述： | 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package |
| 中文描述： | 100V的1000kRad高可靠性單N溝道MOSFET的工貿硬化在TO - 257AA封裝 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 119K |
| 代理商： | IRHY58130CM |
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 60 — 60 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 10 μA
R
DS(on)
Static Drain-to-Source
— 0.044 — 0.053
V
GS
= 12V, I
D
= 18A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.04 — 0.048
V
GS
= 12V, I
D
= 18A
On-State Resistance (TO-257AA)
V
SD
Diode Forward Voltage
— 1.2 — 1.2 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=48V, V
GS
=0V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHY57034CM, IRHY53034CM and IRHY54034CM
2. Part number IRHY58034CM
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 18A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Kr
39.2
300 37.4 60 60 60 52 34
Xe
63.3
300 29.2 46 46 35 25 15
Au
86.6
2068 106 35 35 27
LET
Energy Range
V
DS
(V)
20 14
Table 2. Single Event Effect Safe Operating Area
0
10
20
30
40
50
60
70
0
-5
-10
-15
-20
VGS
V
Kr
Xe
Au
www.irf.com
3
IRHY57034CM
相關PDF資料 |
PDF描述 |
|---|---|
| IRHY58230CM | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 13A I(D) | TO-257AA |
| IRHY58Z30CM | 30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package |
| IRHY593130CM | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 12.5A I(D) | TO-257AA |
| IRHY593230CM | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package |
| IRHY597130CM | -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRHY58230CM | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHY58Z30CM | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHY593034CM | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHY593034CMSCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHY593034CMSCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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