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參數(shù)資料
| 型號： | IRHY58130CM |
| 英文描述： | 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package |
| 中文描述： | 100V的1000kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 257AA封裝 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 119K |
| 代理商： | IRHY58130CM |
www.irf.com
5
Pre-Irradiation
IRHY57034CM
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
500
1000
1500
2000
2500
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
rss
C
oss
C
iss
0
10
20
30
40
0
5
10
15
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
22A
18A
V
= 12V
DS
V
= 30V
DS
V
= 48V
DS
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHY58230CM | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 13A I(D) | TO-257AA |
| IRHY58Z30CM | 30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package |
| IRHY593130CM | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 12.5A I(D) | TO-257AA |
| IRHY593230CM | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package |
| IRHY597130CM | -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHY58230CM | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHY58Z30CM | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHY593034CM | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHY593034CMSCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHY593034CMSCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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