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參數資料
| 型號： | IRL2910 |
| 廠商： | International Rectifier |
| 英文描述： | RES THICK FILM POWER 10 OHM 5W |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 124K |
| 代理商： | IRL2910 |
IRL2910
HEXFET
Power MOSFET
PD - 91375B
S
D
G
Parameter
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
°C/W
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Thermal Resistance
V
DSS
= 100V
R
DS(on)
= 0.026
I
D
= 55A
l
Logic-Level Gate Drive
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
TO-220AB
5/13/98
Parameter
Max.
55
39
190
200
1.3
± 16
520
29
20
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRL2910HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-220AB |
| IRL2910L | 功能描述:MOSFET N-CH 100V 55A TO-262 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRL2910LPBF | 制造商:International Rectifier 功能描述:MOSFET, 100V, 55A, 26 MOHM, 93.3 NC QG, LOGIC LEVEL, TO-262 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 55A 3PIN TO-262 - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N |
| IRL2910LPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRL2910N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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