- 您現在的位置：買賣IC網 > PDF目錄384506 > IRL3103D2 (International Rectifier) FETKY⑩ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A) PDF資料下載
參數資料
| 型號： | IRL3103D2 |
| 廠商： | International Rectifier |
| 英文描述： | FETKY⑩ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A) |
| 中文描述： | FETKY⑩MOSFET的 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 94K |
| 代理商： | IRL3103D2 |
IRL3103D1
PD 9.1608C
12/16/97
Description
The FETKY family of copackaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5
MOSFET with a low forward voltage drop Schottky
diode and minimized component interconnect
inductance and resistance result in maximized
converter efficiencies.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
l
Copackaged HEXFET
Power MOSFET
and Schottky Diode
l
Generation 5 Technology
l
Logic Level Gate Drive
l
Minimize Circuit Inductance
l
Ideal For Synchronous Regulator Application
Parameter
Max.
64
45
220
2.0
89
0.56
± 16
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W
W/°C
V
V
GS
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
V
DSS
= 30V
R
DS(on)
= 0.014
I
D
= 64A
FETKY
TM
MOSFET & SCHOTTKY RECTIFIER
Parameter
Typ.
–––
–––
Max.
1.4
62
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
°C/W
Thermal Resistance
G
D
S
TO-220AB
相關PDF資料 |
PDF描述 |
|---|---|
| IRL3103L | Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A) |
| IRL3103S | Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A) |
| IRL3202 | HEXFET Power MOSFET |
| IRL3215 | HEXFET Power MOSFET |
| IRL3302 | HEXFET Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRL3103D2PBF | 功能描述:MOSFET N-CH 30V 54A TO-220AB RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:FETKY™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRL3103HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 64A 3-Pin(3+Tab) TO-220AB |
| IRL3103L | 功能描述:MOSFET N-CH 30V 64A TO-262 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRL3103LHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 64A 3-Pin(3+Tab) TO-262 |
| IRL3103LPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。