- 您現在的位置：買賣IC網 > PDF目錄385447 > IRL540N (International Rectifier) HEXFET Power MOSFET PDF資料下載
參數資料
| 型號： | IRL540N |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 289K |
| 代理商： | IRL540N |
IRL540N
PRELIMINARY
HEXFET
Power MOSFET
D
V
DSS
= 100V
PD - 9.1495
S
G
R
DS(on)
= 0.044
I
D
= 30A
TO-220AB
8/14/96
Parameter
Max.
30
21
120
94
0.63
± 16
310
18
9.4
4.3
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
0.50
–––
Max.
1.6
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
l
Logic-Level Gate Drive
l
Advanced Process Technology
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
Next Data Sheet
Index
Previous Datasheet
To Order
相關PDF資料 |
PDF描述 |
|---|---|
| IRL540S | HEXFET POWER MOSFET |
| IRL5602S | HEXFET Power MOSFET |
| IRL7NJ3802 | HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRLD024 | Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A) |
| IRLI3215PBF | 68/MDR/RECP/VERT PRS FIT/M2.6/SCW/30 MIN |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRL540NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 36A 3PIN TO-220AB - Rail/Tube |
| IRL540NL | 功能描述:MOSFET N-CH 100V 36A TO-262 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRL540NLPBF | 功能描述:MOSFET MOSFT 100V 36A 44mOhm 49.3nC LogLvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRL540NPBF | 功能描述:MOSFET MOSFT 36A 49.3nC 44mOhm LogLvAB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRL540NS | 制造商:IR 功能描述:HEXFET 100v 36amp 制造商:International Rectifier 功能描述: 制造商:International Rectifier 功能描述:MOSFET Transistor, N-Channel, TO-263AB |
發布緊急采購，3分鐘左右您將得到回復。