- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄377535 > IRLU024ZPBF (International Rectifier) AUTOMOTIVE MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | IRLU024ZPBF |
| 廠商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽車(chē)MOSFET的 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 286K |
| 代理商： | IRLU024ZPBF |
IRLR024ZPbF
IRLU024ZPbF
HEXFET
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 58m
I
D
= 16A
www.irf.com
1
PD - 95773A
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
S
D
G
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
D-Pak
IRLR024Z
I-Pak
IRLU024Z
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
A
W
W/°C
V
mJ
A
mJ
°C
Parameter
Typ.
–––
–––
–––
Max.
4.28
40
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
Max.
16
11
64
35
0.23
± 16
25
-55 to + 175
300 (1.6mm from case )
25
See Fig.12a, 12b, 15, 16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLR110PBF | HEXFET㈢ Power MOSFET |
| IRLU110PBF | HEXFET㈢ Power MOSFET |
| IRLR120 | HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管) |
| IRLU120 | HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管) |
| IRLR2705PBF | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLU034A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 23A I(D) | TO-251AA |
| IRLU110 | 功能描述:MOSFET N-Chan 100V 4.3 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLU110A | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET |
| IRLU110ATU | 功能描述:MOSFET 100V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLU110PBF | 功能描述:MOSFET N-Chan 100V 4.3 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。