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參數資料
| 型號： | IS41C16100S-60T |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 100萬× 16（16兆）動態與江戶頁面模式內存 |
| 文件頁數： | 18/20頁 |
| 文件大小： | 533K |
| 代理商： | IS41C16100S-60T |
IS41C16100S
IS41LV16100S
18
Integrated Circuit Solution Inc.
DR004-0B
HIDDEN REFRESH CYCLE
(1)
(
WE
= HIGH;
OE
= LOW)
CBR
REFRESH CYCLE
(Addresses;
WE
,
OE
= DON'T CARE)
Notes:
1. A Hidden Refresh may also be performed after a Write Cycle. In this case,
WE
= LOW and
OE
= HIGH.
2. t
OFF
is referenced from rising edge of
RAS
or
CAS
, whichever occurs last.
t
RAS
t
RAS
t
RP
t
RP
I/O
UCAS/LCAS
RAS
Open
t
CP
t
RPC
t
CSR
t
CHR
t
RPC
t
CSR
t
CHR
t
RAS
t
RAS
t
RP
UCAS/LCAS
RAS
t
CRP
t
RCD
t
RSH
t
CHR
t
AR
t
ASC
t
RAD
t
RAH
ADDRESS
Row
Column
t
ASR
t
RAL
t
CAH
I/O
Open
Open
Valid Data
t
AA
t
CAC
t
RAC
t
CLZ
t
OFF
(2)
OE
t
OE
t
ORD
t
OD
Undefined
Don
’
t Care
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| IS41C16100S-60TI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-45K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16100S | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16100S-45K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16100S-45KI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS41C16100S-60TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16105 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41C16105-50K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41C16105-50KE | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41C16105-50KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
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