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參數資料
| 型號： | IS41C16100S-60T |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 100萬× 16（16兆）動態與江戶頁面模式內存 |
| 文件頁數： | 7/20頁 |
| 文件大小： | 533K |
| 代理商： | IS41C16100S-60T |
IS41C16100S
IS41LV16100S
Integrated Circuit Solution Inc.
7
DR004-0B
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-45
-50
-60
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Units
t
RC
Random READ or WRITE Cycle Time
Access Time from
RAS
(6, 7)
Access Time from
CAS
(6, 8, 15)
77
—
84
—
104
—
ns
t
RAC
—
45
—
50
—
60
ns
t
CAC
—
11
—
13
—
15
ns
t
AA
Access Time from Column-Address
(6)
RAS
Pulse Width
RAS
Precharge Time
CAS
Pulse Width
(26)
CAS
Precharge Time
(9, 25)
CAS
Hold Time
(21)
RAS
to
CAS
Delay Time
(10, 20)
—
22
—
25
—
30
ns
t
RAS
45
10K
50
10K
60
10K
ns
t
RP
28
—
30
—
40
—
ns
t
CAS
7
10K
8
10K
10
10K
ns
t
CP
7
—
9
—
9
—
ns
t
CSH
35
—
38
—
40
—
ns
t
RCD
10
34
12
37
14
45
ns
t
ASR
Row-Address Setup Time
0
—
0
—
0
—
ns
t
RAH
Row-Address Hold Time
6
—
8
—
10
—
ns
t
ASC
Column-Address Setup Time
(20)
0
—
0
—
0
—
ns
t
CAH
Column-Address Hold Time
(20)
6
—
8
—
10
—
ns
t
AR
Column-Address Hold Time
(referenced to
RAS
)
RAS
to Column-Address Delay Time
(11)
Column-Address to
RAS
Lead Time
RAS
to
CAS
Precharge Time
RAS
Hold Time
(27)
RAS
Hold Time from
CAS
Precharge
CAS
to Output in Low-Z
(15, 29)
CAS
to
RAS
Precharge Time
(21)
30
—
30
—
40
—
ns
t
RAD
8
23
10
25
12
30
ns
t
RAL
23
—
25
—
30
—
ns
t
RPC
5
—
5
—
5
—
ns
t
RSH
6
—
8
—
10
—
ns
t
RHCP
37
—
37
—
37
—
ns
t
CLZ
0
—
0
—
0
—
ns
t
CRP
5
—
5
—
5
—
ns
t
OD
Output Disable Time
(19, 28, 29)
3
13
3
15
3
15
ns
t
OE
Output Enable Time
(15, 16)
—
11
—
13
—
15
ns
t
OED
Output Enable Data Delay (Write)
OE
HIGH Hold Time from
CAS
HIGH
OE
HIGH Pulse Width
OE
LOW to
CAS
HIGH Setup Time
20
—
20
—
20
—
ns
t
OEHC
5
—
5
—
5
—
ns
t
OEP
10
—
10
—
10
—
ns
t
OES
5
—
5
—
5
—
ns
t
RCS
Read Command Setup Time
(17, 20)
0
—
0
—
0
—
ns
t
RRH
Read Command Hold Time
(referenced to
RAS
)
(12)
0
—
0
—
0
—
ns
t
RCH
Read Command Hold Time
(referenced to
CAS
)
(12, 17, 21)
0
—
0
—
0
—
ns
t
WCH
Write Command Hold Time
(17, 27)
6
—
8
—
10
—
ns
t
WCR
Write Command Hold Time
(referenced to
RAS
)
(17)
40
—
40
—
50
—
ns
t
WP
Write Command Pulse Width
(17)
WE
Pulse Widths to Disable Outputs
Write Command to
RAS
Lead Time
(17)
Write Command to
CAS
Lead Time
(17, 21)
6
—
8
—
10
—
ns
t
WPZ
10
—
10
—
10
—
ns
t
RWL
11
—
13
—
15
—
ns
t
CWL
6
—
8
—
10
—
ns
t
WCS
Write Command Setup Time
(14, 17, 20)
Data-in Hold Time (referenced to
RAS
)
0
—
0
—
0
—
ns
t
DHR
39
—
39
—
39
—
ns
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|---|---|
| IS41C16100S-60TI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100S-45K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16100S | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16100S-45K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IS41C16100S-60TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16105 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41C16105-50K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41C16105-50KE | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41C16105-50KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
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