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參數資料
| 型號： | IS42S16800A-10BI |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16Meg × 8，8Meg x16 |
| 文件頁數： | 30/66頁 |
| 文件大小： | 556K |
| 代理商： | IS42S16800A-10BI |
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ISSI
30
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
BURST DEFINITION
Burst
Starting Column
Order of Accesses Within a Burst
Length
Address
Type = Sequential
Type = Interleaved
A0
2
0
0-1
0-1
1
1-0
1-0
A1
A0
0
0
0-1-2-3
0-1-2-3
4
0
1
1-2-3-0
1-0-3-2
1
0
2-3-0-1
2-3-0-1
1
1
3-0-1-2
3-2-1-0
A2
A1
A0
0
0
0
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-7
0
0
1
1-2-3-4-5-6-7-0
1-0-3-2-5-4-7-6
0
1
0
2-3-4-5-6-7-0-1
2-3-0-1-6-7-4-5
8
0
1
1
3-4-5-6-7-0-1-2
3-2-1-0-7-6-5-4
1
0
0
4-5-6-7-0-1-2-3
4-5-6-7-0-1-2-3
1
0
1
5-6-7-0-1-2-3-4
5-4-7-6-1-0-3-2
1
1
0
6-7-0-1-2-3-4-5
6-7-4-5-2-3-0-1
1
1
1
7-0-1-2-3-4-5-6
7-6-5-4-3-2-1-0
Full
Page
(y)
n = A0-A7
Cn, Cn + 1, Cn + 2
Cn + 3, Cn + 4...
…Cn - 1,
Cn…
Not Supported
(location 0-y)
BURST LENGTH
Read and write accesses to the SDRAM are burst oriented,
with the burst length being programmable, as shown in
MODE REGISTER DEFINITION. The burst length deter-
mines the maximum number of column locations that can
be accessed for a given READ or WRITE command. Burst
lengths of 1, 2, 4 or 8 locations are available for both the
sequential and the interleaved burst types, and a full-page
burst is available for the sequential type. The full-page burst
is used in conjunction with the BURST TERMINATE com-
mand to generate arbitrary burst lengths.
Reserved states should not be used, as unknown operation
or incompatibility with future versions may result.
When a READ or WRITE command is issued, a block of
columns equal to the burst length is effectively selected. All
accesses for that burst take place within this block, mean-
ing that the burst will wrap within the block if a boundary is
reached. The block is uniquely selected by A1-A7 (x16)
when the burst length is set to two; by A2-A7 (x16) when the
burst length is set to four; and by A3-A7 (x16) when the burst
length is set to eight. The remaining (least significant)
address bit(s) is (are) used to select the starting location
within the block. Full-page bursts wrap within the page if the
boundary is reached.
Burst Type
Accesses within a given burst may be programmed to be
either sequential or interleaved; this is referred to as the
burst type and is selected via bit M3.
The ordering of accesses within a burst is determined by the
burst length, the burst type and the starting column address,
as shown in BURST DEFINITION table.
相關PDF資料 |
PDF描述 |
|---|---|
| IS42S32400A-10BI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS81600A-10T | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS32400A-10T | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400A-10T | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400A-10TI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS42S16800A-10T | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II |
| IS42S16800A-10TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-10TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-10TLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A1-7TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:8Meg x16 128-MBIT SYNCHRONOUS DRAM |
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