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參數資料
| 型號： | IS42S16800A-10BI |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16Meg × 8，8Meg x16 |
| 文件頁數： | 51/66頁 |
| 文件大小： | 556K |
| 代理商： | IS42S16800A-10BI |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
51
ISSI
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
DON'T CARE
CLK
CKE
COMMAND
ADDRESS
DQ
T0
T1
T2
T3
T4
T5
NOP
WRITE
NOP
NOP
BANK a,
COL n
D
IN
n
D
IN
n+1
D
IN
n+2
INTERNAL
CLOCK
DON'T CARE
CLK
CKE
COMMAND
ADDRESS
DQ
T0
T1
T2
T3
T4
T5
T6
READ
NOP
NOP
NOP
NOP
NOP
BANK a,
COL n
Qn
Qn+1
Qn+2
Qn+3
INTERNAL
CLOCK
CLOCK SUSPEND
Clock suspend mode occurs when a column access/burst
is in progress and CKE is registered LOW. In the clock
suspend mode, the internal clock is deactivated, “freezing”
the synchronous logic.
For each positive clock edge on which CKE is sampled
LOW, the next internal positive clock edge is suspended.
Any command or data present on the input pins at the time
of a suspended internal clock edge is ignored; any data
present on the DQ pins remains driven; and burst counters
are not incremented, as long as the clock is suspended.
(See following examples.)
Clock suspend mode is exited by registering CKE HIGH; the
internal clock and related operation will resume on the
subsequent positive clock edge.
Clock Suspend During WRITE Burst
Clock Suspend During READ Burst
相關PDF資料 |
PDF描述 |
|---|---|
| IS42S32400A-10BI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS81600A-10T | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS32400A-10T | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400A-10T | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400A-10TI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS42S16800A-10T | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II |
| IS42S16800A-10TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-10TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-10TLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A1-7TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:8Meg x16 128-MBIT SYNCHRONOUS DRAM |
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