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參數(shù)資料
| 型號(hào)： | IS42S16800A-7TL |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | LEAD FREE, PLASTIC, TSOP2-54 |
| 文件頁數(shù)： | 14/66頁 |
| 文件大小： | 556K |
| 代理商： | IS42S16800A-7TL |
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ISSI
14
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
CS
H
RAS
×
CAS
×
WE
×
Address
×
Command
DESL
Action
Continue burst to end -
Read with auto
Precharging
Precharge
Precharging
L
H
H
H
x
NOP
Continue burst to end -
L
L
L
L
L
L
L
H
H
H
H
L
L
L
L
×
H
L
L
H
H
L
L
×
L
H
L
H
L
H
L
×
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
×
BST
READ/READA
WRIT/ WRITA
ACT
PRE/PALL
REF
MRS/EMRS
DESL
ILLEGAL
ILLEGAL
(2)
ILLEGAL
(2)
ILLEGAL
(2)
ILLEGAL
(2)
ILLEGAL
ILLEGAL
Continue burst to end -Write
recovering with auto precharge
Continue burst to end -Write
recoveringwith auto precharge
ILLEGAL
ILLEGAL
(2)
ILLEGAL
(2)
Write with Auto
Precharge
L
H
H
H
×
NOP
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
H
H
L
L
L
L
×
H
H
H
H
L
L
L
L
×
H
H
H
H
L
L
L
L
H
L
L
H
H
L
L
×
H
H
L
L
H
H
L
L
×
H
H
L
L
H
H
L
L
L
H
L
H
L
H
L
×
H
L
H
L
H
L
H
L
×
H
L
H
L
H
L
H
L
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
×
×
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
×
×
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
BST
READ/READA
WRIT/ WRITA
PRE/PALL
REF
MRS/EMRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT I
PRE/PALL
REF
MRS/EMRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF
MRS/EMRS
ILLEGAL
(2)
ILLEGAL
ILLEGAL
Nop Enter idle after tRP
Nop Enter idle after tRP
ILLEGAL
ILLEGAL
(2)
ILLEGAL
(2)
LLEGAL
(2)
Nop Enter idle after tRP
ILLEGAL
ILLEGAL
Nop Enter bank active after tRCD
Nop Enter bank active after tRCD
ILLEGAL
ILLEGAL
(2)
ILLEGAL
(2)
ILLEGAL
(2,8)
ILLEGAL
(2)
ILLEGAL
ILLEGAL
Precharging
Row Activating
FUNCTIONAL TRUTH TABLE Continued:
Note: H=V
IH
, L=V
IL
x= V
IH
or V
IL
, V = Valid Data, BA= Bank Address, CA+Column Address, RA=Row Address, OC= Op-Code
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42S16800A-7TLI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400A | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400A-6T | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400A-6TL | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400A-7T | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S16800A-7TLI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42S16800A-7TL-TR | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42S16800A-7T-TR | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42S16800B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800B-6T | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 8Mx16 166Mhz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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