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參數資料
型號： IS42S32400A-10TL
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： CABLE ASSEMBLY; SMA MALE RIGHT ANGLE TO; SMA FEMALE BULKHEAD; 50 OHM, PE-SR405FL (.085" RE-SHAPABLE); 18" CABLE LENGTH;
中文描述： 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
封裝： LEAD FREE, PLASTIC, TSOP2-86
文件頁數： 55/66頁
文件大小： 556K
代理商： IS42S32400A-10TL
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
55
ISSI
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQ
T0
T1
T2
T3
T4
T5
T6
T7
NOP
NOP
NOP
NOP
NOP
NOP
D
OUT
a
D
OUT
a+1
D
OUT
b
D
OUT
b+1
COL a
BCOL b
CAS Latency - 3 (BANK n)
CAS Latency - 3 (BANK m)
t
RP - BANK n
t
RP - BANK m
RBANK n
BANK m
Page Active
READ with Burst of 4
Interrupt Burst, Precharge
Idle
Page Active
READ with Burst of 4
Precharge
Internal States
DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQM
DQ
T0
T1
T2
T3
T4
T5
T6
T7
NOP
NOP
NOP
NOP
NOP
NOP
D
OUT
a
D
IN
b
D
IN
b+1
D
IN
b+2
D
IN
b+3
COL a
BCOL b
CAS Latency - 3 (BANK n)
t
RP - BANK n
t
RP - BANK m
WRITE - AP
BANK n
WRITE - AP
BANK m
READ with Burst of 4
Interrupt Burst, Precharge
Idle
Page Active
WRITE with Burst of 4
Write-Back
Internal States
Page Active
BURST READ/SINGLE WRITE
The burst read/single write mode is entered by programming
the write burst mode bit
(M9)
in the mode register to a logic 1.
In this mode, all
WRITE
commands result in the access of a
single column location (burst of one), regardless of the
programmed burst length. READ commands access
columns according to the programmed burst length and
sequence, just as in the normal mode of operation (M9 = 0).
CONCURRENT AUTO PRECHARGE
An access command (READ or WRITE) to another bank
while an access command with auto precharge enabled is
executing is not allowed by SDRAMs, unless the SDRAM
supports CONCURRENT AUTO PRECHARGE.
ISSI
SDRAMs support CONCURRENT AUTO PRECHARGE.
Four cases where CONCURRENT AUTO PRECHARGE
occurs are defined below.
READ with Auto Precharge
1. Interrupted by a READ (with or without auto precharge):
A READ to bank m will interrupt a READ on bank n, CAS
latency later. The PRECHARGE to bank n will begin
when the READ to bank m is registered.
2. Interrupted by a WRITE (with or without auto precharge):
A WRITE to bank m will interrupt a READ on bank n when
registered. DQM should be used two clocks prior to the
WRITE command to prevent bus contention. The
PRECHARGE to bank n will begin when the WRITE to
bank m is registered.
READ With Auto Precharge interrupted by a READ
READ With Auto Precharge interrupted by a WRITE
相關PDF資料
PDF描述
IS42S32400A-10TLI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-6T 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-6TL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7T 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
相關代理商/技術參數
參數描述
IS42S32400A-10TLI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-6T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-6TL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S32400A-6T-TR 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 86-Pin TSOP-II T/R
IS42S32400A-7B 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
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