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參數(shù)資料
| 型號(hào)： | IS61SF25616 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256K x 16 Synchronous Flow-Through SRAM(256K x 16 同步流通結(jié)構(gòu)靜態(tài)RAM) |
| 中文描述： | 256K × 16同步流通過的SRAM（256K × 16同步流通結(jié)構(gòu)靜態(tài)內(nèi)存） |
| 文件頁(yè)數(shù)： | 1/16頁(yè) |
| 文件大小： | 110K |
| 代理商： | IS61SF25616 |
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Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
05/11/00
1
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the
best possible product. We assume no responsibility for any errors which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
IS61SF25616
IS61SF25618
256K x 16, 256K x 18 SYNCHRONOUS
FLOW-THROUGH STATIC RAM
ISSI
FEATURES
Fast access times: 8 ns, 8.5 ns, 10 ns, and 12 ns
Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data inputs
and control signals
Pentium
TM
or linear burst sequence control
using MODE input
Three chip enables for simple depth expansion
and address pipelining
Common data inputs and data outputs
JEDEC 100-Pin TQFP and
119-pin PBGA package
Single +3.3V +10%, –5% power supply
Power-down snooze mode
PRELIMINARY INFORMATION
APRIL 2000
FAST ACCESS TIME
Symbol
t
KQ
t
KC
Parameter
Clock Access Time
Cycle Time
Frequency
8
8
10
100
8.5
8.5
11
90
10
10
15
66
12
12
15
66
Units
ns
ns
MHz
DESCRIPTION
The
ISSI
IS61SF25616 and IS61SF25618 is a high-speed,
low-power synchronous static RAM designed to provide
a burstable, high-performance memory for high speed
networking and communication applications. It is organized
as 262,144 words by 16 bits and 18 bits, fabricated with
ISSI
's advanced CMOS technology. The device integrates
a 2-bit burst counter, high-speed SRAM core, and high-drive
capability outputs into a single monolithic circuit. All
synchronous inputs pass through registers controlled by
a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be from
one to four bytes wide as controlled by the write control
inputs.
Separate byte enables allow individual bytes to be written.
BW1
controls DQ1-8,
BW2
controls DQ9-16, conditioned
by
BWE
being LOW. A LOW on
GW
input would cause all
bytes to be written.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally by the IS61SF25616 and controlled by the
ADV
(burst address advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61SF25618 | 256K x 18 Synchronous Flow-Through SRAM(256K x 18 同步流通結(jié)構(gòu)靜態(tài)RAM) |
| IS61SF6432 | 64K x 32 Synchronous Flow-Through SRAM(64K x 32 同步流通結(jié)構(gòu)靜態(tài)RAM) |
| IS61SF6436 | 64K x 36 Synchronous Flow-Through SRAM(64K x 36 同步流通結(jié)構(gòu)靜態(tài)RAM) |
| IS61SP12832 | 128K x 32 Synchronous Pipelined SRAM(128K x 32 同步流水線靜態(tài)RAM) |
| IS61SP12836 | 128K x 36 Synchronous Pipelined SRAM(128K x 36 同步流水線靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61SF25618-8.5TQI | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 8.5ns 100-Pin TQFP |
| IS61SF25618-8.5TQI-TR | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 8.5ns 100-Pin TQFP T/R |
| IS61SF51218T-10TQ | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Sync Single 3.3V 8M-Bit 512K x 16 10ns 100-Pin TQFP |
| IS61SP12836-133B | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61SP12836-133TQ-T | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Sync Quad 3.3V 4.5M-Bit 128K x 36 4ns 100-Pin TQFP T/R |
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