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參數(shù)資料
| 型號： | IXFB80N50Q2 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | HiPerFET Power MOSFETs Q-Class |
| 中文描述： | 80 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | PLASTIC, PLUS264, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 172K |
| 代理商： | IXFB80N50Q2 |
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
500
V
V
V
GS
V
GSM
Continuous
Transient
±
30
±
40
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
80
A
A
A
320
80
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
I
S
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
60
5.0
mJ
J
dv/dt
20
V/ns
P
D
890
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.063 in.) from case for 10 s
300
°
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
500
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
20 V, V
DS
= 0
3.0
5.0 V
±
200 nA
I
DSS
V
DS
= V
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
5 mA
R
DS(on)
55 m
DS98958 (10/02)
PLUS 264
TM
(IXFB)
G = Gate
S = Source
D = Drain
TAB = Drain
S
G
D
(TAB)
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
,
Low Intrinsic R
g
High dV/dt,
Low t
rr
Features
●
Double metal process for low gate
resistance
●
Unclamped Inductive Switching (UIS)
rated
●
Low package inductance
- easy to drive and to protect
●
Fast intrinsic rectifier
Applications
●
DC-DC converters
●
Switched-mode and resonant-mode
power supplies, >500kHz switching
●
DC choppers
●
Pulse generation
●
Laser drivers
Advantages
●
PLUS 264
TM
package for clip or spring
mounting
●
Space savings
●
High power density
IXFB 80N50Q
2
V
= 500 V
I
D25
= 80 A
R
DS(on)
= 55 m
t
rr
≤
250 ns
Advance Technical Information
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFB80N50Q2_07 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs |
| IXFB82N60P | 功能描述:MOSFET 82 Amps 600V 0.75 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFB82N60Q3 | 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFC10N80P | 功能描述:MOSFET 5 Amps 800V 1.2 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFC110N10P | 功能描述:MOSFET 55 Amps 100V 0.015 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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