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參數資料
| 型號： | IXFX62N25 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 62 A, 250 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLUS247, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 98K |
| 代理商： | IXFX62N25 |
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
250
250
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
62
A
A
A
248
62
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
45
1.5
mJ
J
I
S
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
390
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
°
C
Mounting torque
TO-264
0.7/6 Nm/lb.in.
PLUS 247
TO-264
6
10
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
250
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±
20 V, V
DS
= 0
2.0
4.0 V
±
100
n
A
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 25
°
C
T
J
= 125
°
C
50
μ
A
2 mA
R
DS(on)
35 m
Single MOSFET Die
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
HiPerFET
TM
Power MOSFETs
98913 (2/02)
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
IXFX 62N25
IXFK 62N25
V
DSS
I
D25
R
DS(on)
=
= 250
= 62
V
A
35 m
t
rr
≤
250 ns
S
G
D
(TAB)
TO-264 AA (IXFK)
Advance Technical Information
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