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參數資料
| 型號： | IXFN64N50P |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | PolarHVTM HiPerFETPower MOSFET |
| 中文描述： | 61 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, MINIBLOC-4 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 58K |
| 代理商： | IXFN64N50P |
2005 IXYS All rights reserved
DS99349(02/05)
PolarHV
TM
HiPerFET
Power MOSFET
IXFN 64N50P V
DSS
I
D25
R
DS(on)
t
rr
= 500 V
= 64 A
≤
85 m
≤
250 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
z
International standard packages
z
Fast recovery diode
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
V
DSS
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8 mA
2.5
5.0
V
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
25
μ
A
μ
A
T
J
= 125
°
C
250
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
85
m
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
V
500
V
V
GSS
V
GSM
Continuous
±
30
V
Transient
±
40
V
I
D25
I
DM
I
AR
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
64
A
A
150
64
A
70
2.0
mJ
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 4
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
20
V/ns
P
D
T
J
T
JM
T
stg
700
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
M
d
V
ISOL
Mounting torque
1.13/10 Nm/lb.in.
50/60 Hz
I
≤
1 mA
Mounting torque
Terminal connection torque (M4)
SOT-227B 30 g
t = 1 min
t = 1 s
2500
3000
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
V~
V~
M
d
Weight
Preliminary Data Sheet
G = Gate
S = Source
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
G
D
S
S
miniBLOC, SOT-227 B (IXFN)
E153432
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXFN64N50P_09 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Polar Power MOSFET HiPerFET |
| IXFN64N50PD2 | 功能描述:分立半導體模塊 64 Amps 500V RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| IXFN64N50PD3 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:PolarHV HiPerFET Power MOSFET |
| IXFN64N60P | 功能描述:MOSFET 600V 64A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN66N50Q2 | 功能描述:MOSFET 66 Amps 500V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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