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參數(shù)資料
| 型號(hào)： | IXFN44N80 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導(dǎo)通電阻0.165Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| 中文描述： | 44 A, 800 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIBLOC-4 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 118K |
| 代理商： | IXFN44N80 |
2001 IXYS All rights reserved
Features
International standard packages
miniBLOC,
with Aluminium nitride
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast ntrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GH(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
D25
Pulse test, t 300 s,
duty cycle d 2 %
800
2.0
V
V
4.0
200
nA
T
J
= 25 C
T
J
= 125 C
100
A
2
mA
R
DS(on)
0.165
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
800
800
V
V
20
30
V
V
T
C
= 25 C, Chip capability
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
44
A
176
44
A
A
64
mJ
4
J
5
V/ns
P
D
T
J
T
JM
T
stg
700
W
-55 ... +150
C
C
C
150
-55 ... +150
V
ISOL
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
HiPerFET
TM
Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
98594B (02/01)
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
V
DSS
I
D25
R
DS(on)
= 0.165
= 800 V
=
44 A
IXFN 44N80
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| IXFN48N50 | 功能描述:MOSFET 500V 48A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| IXFN48N50Q | 功能描述:MOSFET 48 Amps 500V 0.1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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