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參數資料
| 型號： | IXFH8N80 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導通電阻1.1Ω的N溝道增強型HiPerFET功率MOSFET) |
| 中文描述： | 8 A, 800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 206K |
| 代理商： | IXFH8N80 |
1997 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
800
V
800
V
Continuous
±
20
±
30
V
Transient
V
T
C
= 25
°
C
8N80
9N80
8N80
9N80
8N80
9N80
8
9
A
A
A
A
A
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
32
36
I
AR
T
C
= 25
°
C
8
9
E
AR
dv/dt
T
C
= 25
°
C
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
18
mJ
I
S
5
V/ns
P
D
T
J
T
JM
T
stg
M
d
Weight
180
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
V
DSS
temperature coefficient
V
DS
= V
GS
, I
D
= 2.5 mA
V
GS(th)
temperature coefficient
800
V
0.088
%/K
V
GS(th)
2
4.5
V
-0.257
%/K
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
250
μ
A
mA
1
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle
δ ≤
2%
8N80
9N80
1.1
0.9
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
V
DSS
I
D25
R
DS(on)
t
rr
IXFH8N80
IXFH9N80
800V
800V
8A
9A
1.1
0.9
250
ns
250
ns
96527A (8/97)
Preliminary Data Sheet
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
*Add suffix letter "S" for surface mountable
package
TO-247 SMD*
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