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參數(shù)資料
| 型號(hào)： | IXFK35N50 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFET Power MOSFETs |
| 中文描述： | 35 A, 500 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264 |
| 封裝： | TO-264, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 39K |
| 代理商： | IXFK35N50 |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
500
500
V
V
20
30
V
V
T
C
= 25 C
33N50
35N50
33N50
35N50
33N50
35N50
33
35
132
140
30
35
2.5
45
A
A
A
A
A
A
J
I
DM
T
= 25 C,
pulse width limited by T
JM
T
C
= 25 C
I
AR
E
AS
E
AR
dv/dt
I
D
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
= 32 A
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
416
W
-55 ... +150
150
-55 ... +150
C
C
C
1.6 mm (0.063 in) from case for 10 s
300
C
Mounting torque
0.9/6
10
Nm/lb.in.
g
Features
International standard packages
Molding epoxies meet UL 94 V-0
flammability classification
Low R
HDMOS
TM
process
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
V
DSS
500 V
500 V
t
rr
I
D25
33 A 0.16
35 A 0.15
250 ns
R
DS(on)
IXFK33N50
IXFK35N50
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
= 1 mA
V
DSS
temperature coefficient
V
DS
= V
, I
= 4 mA
V
GS(th)
temperature coefficient
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 16.5A
500
V
0.102
%/K
V
GS(th)
2
4
V
-0.206
%/K
I
GSS
I
DSS
200
nA
T
J
= 25 C
T
J
= 125 C
33N50
35N50
200
A
2
mA
R
DS(on)
0.16
0.15
Pulse test, t 300 s, duty cycle d 2 %
97517D (07/00)
G = Gate
S = Source
D = Drain
TAB = Drain
S
G
D
TO-264 AA
D (TAB)
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Preliminary data
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IXFK35N50S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 35A I(D) | TO-264VAR |
| IXFK360N10T | 功能描述:MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK360N15T2 | 功能描述:功率驅(qū)動(dòng)器IC GigaMOS Trench T2 HiperFET PWR MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IXFK36N60 | 功能描述:MOSFET 600V 36A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK36N60P | 功能描述:MOSFET 600V 36A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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