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參數資料
| 型號： | IXFN100N10 |
| 廠商： | IXYS Corporation |
| 英文描述： | HIPERFET Power MOSFTETs |
| 中文描述： | HIPERFET電力MOSFTETs |
| 文件頁數： | 1/4頁 |
| 文件大小： | 112K |
| 代理商： | IXFN100N10 |
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
IXFK
IXFN
IXFN
90N20 100N20 106N20
200
200
200
200
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D80
I
DM
I
AR
E
AR
dv/dt
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
200 V
200 V
20
30
20
30
20 V
20 V
T
C
= 25 C, Chip capability
T
C
= 80 C, limited by external leads
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
90
76
360
50
100
106 A
A
424 A
A
-
400
50
30
30
30 mJ
5
5
5 V/ns
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
500
520
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
-
C
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
-
-
2500
3000
V~
V~
M
d
0.9/6
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
-
Weight
10
30
g
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Features
l
International standard packages
G
JEDEC
TO-264 AA,
epoxy
meet
UL
94
V-0, flammability classification
G
miniBLOC with Aluminium nitride
isolation
G
Low R
HDMOS
TM
process
G
Rugged polysilicon gate cell structure
G
Unclamped Inductive Switching (UIS)
rated
G
Low package inductance
G
Fast intrinsic Rectifier
Applications
G
DC-DC converters
G
Synchronous rectification
G
Battery chargers
G
Switched-mode and resonant-mode
power supplies
G
DC choppers
G
Temperature and lighting controls
G
Low voltage relays
Advantages
G
Easy to mount
G
Space savings
G
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GH(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
D25
Pulse test, t 300 s,
duty cycle d 2 %
200
V
V
2
4
200
nA
T
J
= 25 C
T
J
= 125 C
400
A
2
mA
R
DS(on)
IXFK90N20
IXFN100N20
IXFN106N20
0.023
0.023
0.020
TO-264 AA (IXFK)
S
G
D
D
S
G
S
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
S
G
S
D
92804H (7/97)
miniBLOC, SOT-227 B (IXFN)
E153432
(TAB)
V
DSS
200 V
200 V
200 V
I
D25
90 A
100 A
106 A
R
DS(on)
23 m
23 m
20 m
IXFK 90 N 20
IXFN 100 N 20
IXFN 106 N 20
t
rr
200 ns
TO-264 AA
IXYS reserves the right to change limits, test conditions, and dimensions.
相關PDF資料 |
PDF描述 |
|---|---|
| IXFK90N20 | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導通電阻23mΩ的N溝道增強型HiPerFET功率MOSFET) |
| IXFN100N25 | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓250V,導通電阻27mΩ的N溝道增強型HiPerFET功率MOSFET) |
| IXFN120N20 | CAP 8200PF 50V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 |
| IXFN130N30 | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓300V,導通電阻18mΩ的N溝道增強型HiPerFET功率MOSFET) |
| IXFN150N15 | HiPerFET Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXFN100N10S1 | 功能描述:MOSFET N-CH 100V 100A SOT-227B RoHS:是 類別:半導體模塊 >> FET 系列:HiPerFET™ 標準包裝:10 系列:* |
| IXFN100N10S2 | 功能描述:MOSFET N-CH 100V 100A SOT-227B RoHS:是 類別:半導體模塊 >> FET 系列:HiPerFET™ 標準包裝:10 系列:* |
| IXFN100N10S3 | 功能描述:MOSFET N-CH 100V 100A SOT-227B RoHS:是 類別:半導體模塊 >> FET 系列:HiPerFET™ 標準包裝:10 系列:* |
| IXFN100N20 | 功能描述:MOSFET 100 Amps 200V 0.023 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN100N25 | 功能描述:MOSFET 100 Amps 250V 0.027 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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