- 您現在的位置：買賣IC網 > PDF目錄383193 > IXFN280N07 (IXYS CORP) Standoff; Leaded Process Compatible:Yes RoHS Compliant: Yes PDF資料下載
參數資料
| 型號： | IXFN280N07 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Standoff; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| 中文描述： | 280 A, 70 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIBLOC-4 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 102K |
| 代理商： | IXFN280N07 |
2002 IXYS All rights reserved
Features
International standard packages
miniBLOC,
with Aluminium nitride
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast ntrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GH(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±
20 V
DC
, V
DS
= 0
70
V
2.0
4.0
V
±
200
nA
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
mA
2
R
DS(on)
V
GS
= 10 V, I
D
= 120A
Pulse test, t
≤
300
μ
s,
duty cycle d
≤
2 %
5 m
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
70
V
70
V
Continuous
±
20
±
30
V
Transient
V
I
D25
I
L(RMS)
I
DM
I
AR
T
C
= 25
°
C, Chip capability
Terminal current limit
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
280
A
100
A
1120
A
180
A
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
I
S
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
60
mJ
3
J
5
V/ns
P
D
600
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
V
ISOL
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
98555B (1/02)
D
S
G
S
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
IXFN 280N07
V
DSS
I
D25
R
DS(on)
= 5 m
t
rr
< 250 ns
= 70
= 280
V
A
Avalanche Rated, High dv/dt, Low t
rr
Preliminary data sheet
相關PDF資料 |
PDF描述 |
|---|---|
| IXFN32N60 | HiPerFET Power MOSFET |
| IXFN340N07 | HiPerFET Power MOSFETs Single Die MOSFET |
| IXFN340N06 | HiPerFET Power MOSFETs Single Die MOSFET |
| IXFN34N100 | HiPerFET Power MOSFETs Single Die MOSFET |
| IXFN34N80 | HiPerFETTM Power MOSFETs Single DieMOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXFN280N07_08 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Single Die MOSFET |
| IXFN280N085 | 功能描述:MOSFET 280 Amps 85V 0.0044 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN300N10P | 功能描述:MOSFET Polar Power MOSFET HiPerFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN30N110P | 功能描述:MOSFET 30 Amps 1100V 0.3600 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN30N120P | 功能描述:MOSFET 30 Amps 1200V 0.35 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。