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參數資料
| 型號： | IXGH22N50BS |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | 44 A, 500 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 68K |
| 代理商： | IXGH22N50BS |
1996 IXYS All rights reserved
96532A(12/96)
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
500
500
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 22
Clamped inductive load, L = 100
μ
H
44
22
88
A
A
A
I
= 44
@ 0.8 V
CES
A
P
C
T
J
T
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25
°
C
150
W
-55 ... +150
°
C
°
C
°
C
JM
JM
150
-55 ... +150
300
°
C
M
d
Weight
Mounting torque (M3)
1.13/10
Nm/lb.in.
TO-247 AD
TO-247 SMD
6
4
g
g
HierAST
TM
IGBT
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
V
GE(th)
CES
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
500
2.5
V
V
5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.1
2.5
V
V
CES
I
C(25)
V
CE(sat)typ
=
t
fi(typ)
= 500 V
=
44 A
2.1 V
= 55 ns
Preliminary data
IXGH22N50B
IXGH22N50BS
G
E
C (TAB)
Features
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
High frequency IGBT
High current handling capability
HiPerFAST
TM
HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Very low switching losses for high
frequency applications
Easy to mount with 1 screw,TO-247
(insulated mounting screw hole)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
C (TAB)
GCE
TO-247 SMD*
TO-247 AD
相關PDF資料 |
PDF描述 |
|---|---|
| IXGH24N50B | HiPerFAST IGBT |
| IXGH24N60A | HiPerFAST IGBT |
| IXGH24N60BU1 | HiPerFAST IGBT with Diode |
| IXGH24N60AU1S | HiPerFAST IGBT with Diode |
| IXGH24N60AU1 | HiPerFAST IGBT with Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXGH22N50BU1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode |
| IXGH22N50BU1S | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode |
| IXGH22N50C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 44A I(C) | TO-247AD |
| IXGH240N30PB | 功能描述:IGBT 晶體管 240 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH24N120C3 | 功能描述:IGBT 晶體管 48 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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