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參數資料
| 型號： | IXGH32N170A |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 中文描述： | 32 A, 1700 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 572K |
| 代理商： | IXGH32N170A |
2004 IXYS All rights reserved
V
CES
= 1700
V
I
C25
=
32
A
V
CE(sat)
=
5.0 V
t
fi(typ)
=
50 ns
IXGH 32N170A
IXGT 32N170A
C (TAB)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
G
C
E
TO-247 AD
(IXGH)
Features
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
High current handling capability
MOS Gate turn-on
- drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Applications
Capacitor discharge & pulser circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98942D(09/04)
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
A, V
GE = 0 V
1700
V
V
GE(th)
I
C
= 250
A, V
CE = VGE
3.0
5.0
V
I
CES
V
CE = 0.8 VCES
T
J =
25
°C50
A
V
GE = 0 V
Note 1
T
J = 125°C2
mA
I
GES
V
CE = 0 V, VGE = ±20 V
±100
nA
V
CE(sat)
I
C
= I
C90, VGE = 15 V
T
J =
25
°C
4.0
5.0
V
T
J = 125°C
4.8
V
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
°C to 150°C
1700
V
V
CGR
T
J
= 25
°C to 150°C; R
GE = 1 M
1700
V
V
GES
Continuous
±20
V
V
GEM
Transient
±30
V
I
C25
T
C = 25°C32
A
I
C90
T
C = 90°C21
A
I
CM
T
C = 25°C, 1 ms
110
A
SSOA
V
GE = 15 V, TVJ = 125°C, RG = 5
I
CM = 70
A
(RBSOA)
Clamped inductive load
@ 0.8 V
CES
t
SC
T
J = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10
10
s
P
C
T
C = 25°C
350
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
M
d
Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in.
Maximum lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
6
g
TO-268
4
g
TO-268 (IXGT)
G
E
High Voltage
IGBT
C (TAB)
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