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參數資料
| 型號： | IXGL200N60B3 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 文件頁數： | 1/6頁 |
| 文件大小： | 211K |
| 代理商： | IXGL200N60B3 |
2008 IXYS CORPORATION, All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min.
Typ.
Max.
BV
CES
I
C
= 250
μA, V
GE = 0V
600
V
V
GE(th)
I
C
= 250
μA, V
CE = VGE
3.0
5.0
V
I
CES
V
CE = VCES
200
μA
V
GE = 0V
T
J = 125°C
2
mA
I
GES
V
CE = 0V, VGE = ±20V
±100
nA
V
CE(sat)
I
C
= 100A, V
GE = 15V, Note 1
1.35
1.50
V
I
C
= 200A
1.65
V
T
J = 125°C
1.75
V
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
°C to 150°C
600
V
V
CGR
T
J
= 25
°C to 150°C, R
GE = 1MΩ
600
V
V
GES
Continuous
±20
V
V
GEM
Transient
±30
V
I
C25
T
C
= 25
°C (limited by leads)
150
A
I
C110
T
C
= 110
°C (chip capability)
90
A
I
CM
T
C
= 25
°C, 1ms
600
A
SSOA
V
GE = 15V, TVJ = 125°C, RG = 1Ω
I
CM = 300
A
(RBSOA)
Clamped inductive load @ V
CE ≤ 600V
P
C
T
C
= 25
°C
400
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
Maximum lead temperature for soldering
300
°C
T
SOLD
Plastic body for 10s
260
°C
V
ISOL
50/60Hz, RMS, 1 minute
2500
V~
I
ISOL ≤ 1mA
t = 1s
3000
V~
F
C
Mounting force
20..120/4.5..27
N/lb.
Weight
8
g
DS99917B(05/08)
IXGL200N60B3
G = Gate
C = Collector
E = Emitter
G CCE E
V
CES
= 600V
I
C110
= 90A
V
CE(sat) ≤
≤≤≤≤ 1.50V
t
fi(typ)
= 183ns
GenX3TM 600V IGBT
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
Features
Silocon chip on Direct-Copper Bond
(DCB) substrate
Isolated mounting surface
Square RBSOA
High current handling capability
2500V electrical isolation
Advantages
High power density
Low gate drive requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
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相關代理商/技術參數 |
參數描述 |
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| IXGL50N60BD1 | 功能描述:IGBT 晶體管 75 Amps 600V 2.7 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGL75N250 | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGM10N100A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 20A I(C) | TO-204AE |
| IXGM10N50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 20A I(C) | TO-204AE |
| IXGM10N50A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 20A I(C) | TO-204AE |
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