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參數資料
| 型號： | IXSH40N60B |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:54; Connector Shell Size:32; Connecting Termination:Crimp; Circular Shell Style:Right Angle Plug; Body Style:Right Angle |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 55K |
| 代理商： | IXSH40N60B |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
G
= 2.7
Clamped inductive load, V
CC
= 0.8 V
CES
V
GE
= 15 V, V
= 360 V, T
J
= 125 C
R
G
= 22
non repetitive
T
C
= 25 C
75
40
A
A
A
150
I
= 80
@ 0.8 V
CES
A
t
(SCSOA)
10
s
P
C
T
J
T
JM
T
stg
M
d
Weight
280
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
1.13/10 Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
600
V
V
4
7
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
25
1
A
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.2
V
Features
International standard packages
Guaranteed Short Circuit SOA
capability
Low V
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Fast Fall Time for switching speeds
up to 50 kHz
Applications
AC and DC motor speed control
Uninterruptible power supplies (UPS)
Welding
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
98521B (7/00)
G = Gate
E = Emitter
TAB = Collector
TO-247 AD (IXSH)
(TAB)
TO-268 (D3) ( IXST)
(TAB)
G
E
High Speed IGBT
Short Circuit SOA Capability
IXSH 40N60B
IXST 40N60B
C
E
G
IXYS reserves the right to change limits, test conditions, and dimensions.
V
CES
I
C25
V
CE(sat)
=
t
fi typ
=
=
600V
75A
2.2V
=
100 ns
Preliminary data
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXSH40N60B2D1 | 功能描述:IGBT HS W/DIODE 600V 48A TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IXSH45N100 | 功能描述:IGBT 晶體管 IGBT SCSOA 1000V 50A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH45N120 | 功能描述:IGBT 晶體管 45 Amps 1200V 3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH45N120B | 功能描述:IGBT 晶體管 75 Amps 1200V 3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH50N60B | 功能描述:IGBT 晶體管 75 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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