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參數資料
| 型號： | IXSK30N60BD1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Speed IGBT with Diode |
| 中文描述： | 55 A, 600 V, N-CHANNEL IGBT, TO-264 |
| 封裝： | TO-264, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 72K |
| 代理商： | IXSK30N60BD1 |
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2000 IXYS All rights reserved
TO-247AD
(IXSH)
High Speed IGBT with Diode
IXSH
30
N60CD1
IXSK
30
N60CD1
IXST
30
N60CD1
Short Circuit SOA Capability
G
CE
G = Gate
E = Emitter
C = Collector
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
G
= 10
Clamped inductive load, V
CL
= 0.8 V
CES
V
GE
= 15 V, V
= 360 V, T
J
= 125 C
R
G
= 33
non repetitive
T
C
= 25 C
55
30
A
A
A
110
I
CM
= 60
A
t
(SCSOA)
10
s
P
C
T
J
T
JM
T
stg
M
d
Weight
200
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
1.13/10
Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 750 A, V
GE
= 0 V
= 2.5 mA, V
CE
= V
GE
600
V
V
4
7
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
200
A
3
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
V
GE
= 15 V
I
C
= I
C90
2.5
V
Features
International standard packages:
JEDEC TO-247, TO-264& TO-268
Short Circuit SOA capability
High freqeuncy IGBT and anti-
parallel FRED in one package
New generation HDMOS
TM
process
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Surface mountable, high power case
style
Reduces assembly time and cost
High power density
98518A (7/00)
V
CES
I
C25
V
CE(sat)
=
t
fi
=
=
600 V
55 A
2.5 V
70 ns
=
TO-268 (D3)
(IXST)
G
C
E
G
CE
TO-264
(IXSK)
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
相關PDF資料 |
PDF描述 |
|---|---|
| IXST30N60BD1 | High Speed IGBT with Diode |
| IXSH30N60U1 | Low VCE(sat) High Speed IGBT with Diode(VCE(sat)為2.5V的高速絕緣柵雙極場效應管(帶二極管）) |
| IXSH30N60AU1 | Low VCE(sat) High Speed IGBT with Diode(VCE(sat)為3.0V的高速絕緣柵雙極場效應管(帶二極管）) |
| IXSH30N60 | Low VCE(sat) High Speed IGBT(VCE(sat)為2.5V的高速絕緣柵雙極場效應管) |
| IXSH30N60A | Low VCE(sat) High Speed IGBT(VCE(sat)為3.0V的高速絕緣柵雙極場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXSK30N60CD1 | 功能描述:IGBT 晶體管 55 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSK35N120AU1 | 功能描述:IGBT 晶體管 70 Amps 1200V 4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSK35N120BD1 | 功能描述:IGBT 晶體管 70 Amps 1200V 3.6 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSK40N60BD1 | 功能描述:IGBT 晶體管 75 Amps 600V 2.2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSK40N60CD1 | 功能描述:IGBT 晶體管 75 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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