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參數(shù)資料
| 型號(hào)： | JANSR2N7464T2 |
| 廠商： | International Rectifier |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 199K |
| 代理商： | JANSR2N7464T2 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
2.5
1.6
10
25
0.2
±20
154
2.5
2.5
8.0
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in. (1.6mm) from case for 10 sec.)
0.98 (Typical)
g
Pre-Irradiation
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
www.irf.com
1
TO-39
Product Summary
Part Number Radiation Level R
DS(on)
IRHF7430SE 100K Rads (Si) 1.77
I
D
QPL Part Number
JANSR2N7464T2
2.5A
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Neuton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
IRHF7430SE
JANSR2N7464T2
500V, N-CHANNEL
REF: MIL-PRF-19500/675
International Rectifier’s RADHard
TM
HEXFET
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
RAD Hard
HEXFET
TECHNOLOGY
PD - 91863D
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