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參數資料
型號: JANSR2N7497T2
廠商: International Rectifier
元件分類: 功率晶體管
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 30V的N溝道的PowerTrench MOSFET的
文件頁數: 1/8頁
文件大小: 191K
代理商: JANSR2N7497T2
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
10.5
6.5
42
25
0.2
±20
164
10.5
2.5
8.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
o
C
A
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
I
D
QPL Part Number
IRHF57133SE 100K Rads (Si) 0.1
10.5A JANSR2N7497T2
TO-39
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
RADIATION HARDENED JANSR2N7497T2
POWER MOSFET 130V, N-CHANNEL
THRU-HOLE (TO-39)
REF: MIL-PRF-19500/706
IRHF57133SE
TECHNOLOGY
PD - 94334B
相關PDF資料
PDF描述
JANSR2N7498T2 RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39)
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