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參數資料
| 型號： | KMB7D0NP30QA |
| 廠商： | KEC Holdings |
| 英文描述： | N and P-Ch Trench MOSFET |
| 中文描述： | N和P通道溝道MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大小： | 509K |
| 代理商： | KMB7D0NP30QA |
1/9
SEMICONDUCTOR
TECHNICAL DATA
KMB7D0NP30QA
N and P-Ch Trench MOSFET
Revision No : 2
General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for power management in PC,
portable equipment and battery powered systems.
FEATURES
N-Channel
: V
DSS
=30V, I
D
=7A.
: R
DS(ON)
=23.5m
: R
DS(ON)
=39m
P-Channel
: V
DSS
=-30V, I
D
=-5A.
: R
DS(ON)
=45.5m
: R
DS(ON)
=80m
Super High Dense Cell Design.
Reliable and rugged.
(Max.) @ V
GS
=10V
(Max.) @ V
GS
=4.5V
(Max.) @ V
GS
=-10V
(Max.) @ V
GS
=-4.5V
MAXIMUM RATING (Ta=25
)
G1
S1
D1
D1
G2
D2
D2
S2
N-Channel MOSFET
P-Channel MOSFET
CHARACTERISTIC
SYMBOL
N-Ch
P-Ch
UNIT
Drain-Source Voltage
V
DSS
30
-30
V
Gate-Source Voltage
V
GSS
22
22
V
Drain Current
DC
I
D
*
7
-5
A
Pulsed
(note1)
I
DP
29
-20
Source-Drain Diode Current
I
S
1.7
-1.7
A
Drain Power Dissipation
P
D
*
2
W
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
Thermal Resistance, Junction to Ambient
R
thJA
*
62.5
/W
1
2
3
4
8
7
6
5
S1
G1
S2
G2
D1
D1
D2
D2
2007. 6. 28
B2
G
H
B1
1
4
5
8
A
P
D
L
T
FLP-8
0.20+0.1/-0.05
T
P
1.27
MILLIMETERS
4.85 0.2
+
3.94 0.2
6.02 0.3
0.4 0.1
0.15+0.1/-0.05
1.63 0.2
+
0.65 0.2
DIM
A
B1
B2
D
G
H
L
PIN CONNECTION (TOP VIEW)
Note : *Sorface Mounted on FR4 Board
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相關代理商/技術參數 |
參數描述 |
|---|---|
| KMB7D0NP30QA_11 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:N and P-Ch Trench MOSFET |
| KMB7D1DP30QA | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:Dual P-Ch Trench MOSFET |
| KMB7D6NP30Q | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:FLP-8 PACKAGE |
| KMB8D0P30Q | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:FLP-8 PACKAGE |
| KMB8D0P30QA | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:P-Ch Trench MOSFET |
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