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參數資料
| 型號： | KSE172 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low Power Audio Amplifier Low Current, High Speed Switching Applications |
| 中文描述： | 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 50K |
| 代理商： | KSE172 |
2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
K
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSE170
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CEO
Collector-Emitter Breaksown Voltage
Parameter
Value
- 60
- 80
- 100
- 40
- 60
- 80
- 7
- 3
- 6
- 1
12.5
1.5
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°
C
°
C
: KSE171
: KSE172
V
CEO
Collector-Emitter Voltage : KSE170
: KSE171
: KSE172
V
EBO
I
C
I
CP
I
B
P
C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (T
a
=25
°
C)
Junction Temperature
Storage Temperature
T
J
T
STG
Test Condition
Min.
Max.
Units
: KSE170
: KSE171
: KSE172
I
C
= 10mA, I
B
= 0
V
CB
= - 60V, I
B
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
V
CB
= - 60V, I
E
= 0, T
C
= 150
°
C
V
CB
= - 80V, I
E
= 0, T
C
= 150
°
C
V
CB
= - 100V, I
E
= 0, T
C
= 150
°
C
V
BE
= - 7V, I
C
= 0
V
CE
= - 1V, I
C
= - 100mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 1.5A
I
C
= - 500mA, I
B
= - 50mA
I
C
= - 1.5A, I
B
= - 150mA
I
C
= - 3A, I
B
= - 600mA
I
C
= - 1.5A, I
B
= - 150mA
I
C
= - 3A, I
B
= - 600mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 10V, I
C
= - 100mA
V
CB
= - 10V, I
E
= 0, f = 0.1MHz
-40
-60
-80
V
V
V
μ
A
μ
A
μ
A
mA
mA
mA
μ
A
I
CBO
I
EBO
h
FE
Collector Cut-off Current : KSE170
: KSE171
: KSE172
: KSE170
: KSE171
: KSE172
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
250
Emitter Cut-off Current
DC Current Gain
50
30
12
V
CE
(sat)
Collector-Emitter Saturation Voltage
-0.3
-0.9
-1.7
-1.5
-2.0
-1.2
V
V
V
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
V
BE
(on)
f
T
C
ob
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
50
MHz
pF
50
KSE170/171/172
Low Power Audio Amplifier
Low Current, High Speed Switching Applications
1
1. Emitter 2.Collector 3.Base
TO-126
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PDF描述 |
|---|---|
| KSE180 | Low Power Audio Amplifier Low Current High Speed Switching Applications |
| KSE181 | Low Power Audio Amplifier Low Current High Speed Switching Applications |
| KSE182 | Low Power Audio Amplifier Low Current High Speed Switching Applications |
| KSE200 | Feature |
| KSE210 | Feature |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KSE172STU | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSE180 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Low Power Audio Amplifier Low Current High Speed Switching Applications |
| KSE180S | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSE181 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Low Power Audio Amplifier Low Current High Speed Switching Applications |
| KSE181STU | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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