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參數資料
| 型號： | KST2907A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose Transistor |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/4頁 |
| 文件大小： | 54K |
| 代理商： | KST2907A |
2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
K
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C
unless otherwise noted
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Symbol
Parameter
Value
-60
-60
-5
-600
350
150
Units
V
V
V
mA
mW
°
C
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
Parameter
Test Condition
Min.
-60
-60
-5
Max.
Units
V
V
V
μ
A
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
I
C
= -10
μ
A, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -10
μ
A, I
C
=0
V
CB
= -50V, I
E
=0
V
CE
= -10V, I
C
= -0.1mA
V
CE
= -10V, I
C
= -1.0mA
V
CE
= -10V, I
C
= -10mA
*V
CE
= -10V, IC= -150mA
*V
CE
= -10V, I
C
= -500mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -50mA, V
CE
= -20V
f=100MHz
V
CB
= -10V, I
E
=0, f=1.0MHz
V
CC
= -30V, I
C
= -150mA
I
B1
= -15mA
V
CC
= -6V, I
C
= -150mA
I
B1
=I
B2
= -15mA
-0.01
75
100
100
100
50
300
V
CE
(sat)
* Collector-Emitter Saturation Voltage
-0.4
-1.6
-1.3
-2.6
V
V
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
f
T
Current Gain Bandwidth Product
200
MHz
C
ob
t
ON
Output Capacitance
Turn On Time
8
50
pF
ns
t
OFF
Turn Off Time
110
ns
KST2907A
General Purpose Transistor
2F
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
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相關代理商/技術參數 |
參數描述 |
|---|---|
| KST2907AMTF | 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KST2907A-MTF | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| KST2907AMTF_G | 制造商:Fairchild Semiconductor Corporation 功能描述:PNP S/S TR, SOT-23,HF |
| KST2907AMTF_Q | 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KST2907MTF | 功能描述:兩極晶體管 - BJT DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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