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參數資料
| 型號： | KTA1283 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT) |
| 中文描述： | 外延平面PNP晶體管（高電流） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 68K |
| 代理商： | KTA1283 |
1999. 11. 30
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1283
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
HIGH CURRENT APPLICATION.
FEATURE
Complementary to KTC3211.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
A
B
C
D
E
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
0.45 MAX
1.00
F
G
H
J
K
L
M
N
D
1 2
3
B
A
J
K
G
H
F
F
L
C
E
C
M
N
1. EMITTER
2. COLLECTOR
3. BASE
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
(2) Classification O:85
160 , Y:120
200 , GR:160
300
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-1.5
A
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-35V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-6V, I
C
=0
-
-
-100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-100
A, I
E
=0
-40
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-2mA, I
B
=0
-25
-
-
V
DC Current Gain
h
FE
(1)
V
CE
=-1V, I
C
=-5mA
45
170
-
h
FE
(2) (Note)
V
CE
=-1V, I
C
=-100mA
85
160
300
h
FE
(3)
V
CE
=-1V, I
C
=-800mA
40
80
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-800mA, I
B
=-80mA
-
-0.28
-0.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-800mA, I
B
=-80mA
-
-0.98
-1.2
V
Base-Emitter Voltage
V
BE
V
CE
=-1V, I
C
=-10mA
-
-0.66
-1.0
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-50mA
100
200
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1MHz, I
E
=0
-
15
-
pF
相關PDF資料 |
PDF描述 |
|---|---|
| KTA1296 | EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING) |
| KTA1298 | EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, POWER SWITCHING) |
| KTA1360 | TRIPLE DIFFUSED PNP TRANSISTOR(AUDIO FREQUENCY AMPLIFIER) |
| KTA1381 | EPITAXIAL PLANAR PNP TRANSISTOR (HIGH-DIFFINITION CRT DISPLAY VIDEO OUTPUT) |
| KTA1385D | EPITAXIAL PLANAR PNP TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KTA1296 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING) |
| KTA1298 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, POWER SWITCHING) |
| KTA1360 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED PNP TRANSISTOR(AUDIO FREQUENCY AMPLIFIER) |
| KTA1381 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (HIGH-DIFFINITION CRT DISPLAY VIDEO OUTPUT) |
| KTA1385D | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT) |
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