
No. 5476-6/43
LC78711E
Continued from preceding page.
Pin no.
Pin
Pin type
I/O
Polarity
Pin function
51
TEST12
Test input
I
Positive
Test input. Must be connected to ground during normal operation.
52
PALID
PAL mode external control input
I
Positive
External superimpose function control input for PAL mode
(A pull-up resistor is built in.)
53
HRESET
External horizontal
I
Negative
External horizontal synchronization timing control input
synchronization input
Subcarrier clock output
54
FSCO
Clock output
O
Positive
NTSC mode: 3.579545 MHz
PAL mode: 4.433619 MHz
55
VRESET
External vertical
I
Negative
External vertical synchronization timing control input
synchronization input
56
INIT
Initialization input
I
Negative
System initialization signal input
57
RESET
Reset input
I
Negative
System reset signal input
58
N/P1
NTSC/PAL selection
I
Positive
NTSC/PAL selection input (RGB encoder block)
High: NTSC, low: PAL
59
N/P2
NTSC/PAL selection
I
Positive
NTSC/PAL selection input (decoder block)
High: NTSC, low: PAL
60
SON
Superimpose control
I
Positive
Superimpose function on/off control input
High: superimpose on
61
XIN2
Crystal oscillator element
I—
Connections for the PAL crystal oscillator element
62
XOUT2
connections
O—
(4fsc = 17.734476 MHz)
63
XIN1
Crystal oscillator element
I—
Connections for the NTSC crystal oscillator element
64
XOUT1
connections
O—
(4fsc = 14.31818 MHz)
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Random read/write cycle
tRC
250
ns
Page mode cycle
tPC
130
ns
RAS access time
tRAC
210
ns
CAS access time
tCAC
10
ns
Output turn off delay
tOFF
20
ns
RAS precharge time
tRP
100
ns
RAS pulse width
tRAS
120
ns
RAS pulse width (page mode)
tRASP
18000
ns
RAS hold time
tRSH
60
ns
CAS hold time
tCSH
120
ns
CAS pulse width
tCAS
60
ns
CAS precharge time
tCPN
50
ns
CAS precharge time
tCP
Page mode
50
ns
Row address setup time
tASR
100
ns
Row address hold time
tRAH
50
ns
Column address setup time
tASC
0ns
Column address hold time
tCAH
50
ns
Read command setup time
tRCS
150
ns
Read command hold time
tRCH
Referenced to CAS
120
ns
Read command hold time
tRRH
Referenced to RAS
120
ns
Write command setup time
tWCS
100
ns
Write command hold time
tWCH
50
ns
Write command pulse width
tWP
150
ns
Write data setup time
tDS
100
ns
Write data setup time
tDH
100
ns
CAS setup time
tCSR
CAS before RAS
50
ns
CAS hold time
tCHR
CAS before RAS
50
ns
RAS precharge CAS active time
tRPC
50
ns
Refresh time
tREF
3.5
ms
Timing Characteristics (DRAM access timing) at Ta = +25C, DVDD1 = 5 V