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參數資料
| 型號： | M28F008 |
| 廠商： | Intel Corp. |
| 英文描述： | 8MBit(1MBitx8) Flash Memory(8M位(1MBitx8)閃速存儲器) |
| 中文描述： | 8MBit（1MBitx8）閃存（800萬位（1MBitx8）閃速存儲器） |
| 文件頁數： | 1/28頁 |
| 文件大小： | 401K |
| 代理商： | M28F008 |
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*
Other brands and names are the property of their respective owners.
Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or
copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make
changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.
November 1994
COPYRIGHT
INTEL CORPORATION, 1995
Order Number: 271232-004
M28F008
8 MBIT (1 MBIT x 8) FLASH MEMORY
Y
High-Density Symmetrically Blocked
Architecture
D Sixteen 64 Kbyte Blocks
Y
Extended Cycling Capability
D 10K Block Erase Cycles Minimum
D 160K Block Erase Cycles per Chip
Y
Automated Byte Write and Block Erase
D Command User Interface
D Status Register
Y
System Performance Enhancements
D RY/BY Status Output
D Erase Suspend Capability
Y
SRAM-Compatible Write Interface
Y
Very High-Performance Read
D 100 ns Maximum Access Time
Y
Hardware Data Protection Feature
D Erase/Write Lockout during Power
Transitions
Y
Industry Standard Packaging
D 40-Lead Sidebrazed DIP
D 42-Lead Flatpack
Y
ETOX
TM
Nonvolatile Flash Technology
D 12V Byte Write/Block Erase
Y
Independent Software Vendor Support
D Microsoft
*
Flash File System (FFS)
Intel’s M28F008 8-Mbit FlashFile Memory is the highest density nonvolatile read/write solution for solid state
storage. The M28F008’s extended cycling, symmetrically blocked architecture, fast access time, write automa-
tion and low power consumption provide a more reliable, lower power, lighter weight and higher performance
alternative to traditional rotating disk technology. The M28F008 brings new capabilities to portable computing.
Application and operating system software stored in resident flash memory arrays provide instant-on, rapid
execute-in-place and protection from obsolescence through in-system software updates. Resident software
also extends system battery life and increases reliability by reducing disk drive accesses.
For high-density data acquisition applications, the M28F008 offers a more cost-effective and reliable alterna-
tive to SRAM and battery. Traditional high density embedded applications, such as telecommunications, can
take advantage of the M28F008’s nonvolatility, blocking and minimal system code requirements for flexible
firmware and modular software designs.
The M28F008 is offered in 40-lead sidebrazed DIP and 42-lead Flatpack packages. This device uses an
integrated Command User Interface and state machine for simplified block erasure and byte write. The
M28F008 memory map consists of 16 separately erasable 64 Kbyte blocks.
Intel’s M28F008 employs advanced CMOS circuitry for systems requiring low power consumption and noise
immunity. Its 100 ns access time provides superior performance when compared with magnetic storage media.
A deep powerdown mode lowers power consumption to 500
m
W maximum thru V
CC
. The RP power control
input also provides absolute data protection during system powerup/down.
Manufactured on Intel’s ETOX process technology, the M28F008 provides the highest levels of quality, reliabil-
ity and cost-effectiveness.
*
Microsoft is a trademark of Microsoft Corporation.
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