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參數(shù)資料
| 型號(hào)： | MA44781 |
| 元件分類： | PIN二極管 |
| 英文描述： | SILICON, PIN DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE ODS-1134, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 49K |
| 代理商： | MA44781 |
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Dual Anti- Parallel Pair PIN Diode
V2
MA44781
1
Features
Surface Mount Packages
Anti-Parallel Pair Construction
SPC Process for Superior C-V Repeatability
Designed for MRI applications
Lead-Free (RoHs Compliant) equivalents
available with 260°C reflow compatibility
Description
The
MA44781 is a silicon PIN diodes in
surface
mount packages. There are two sets of two PIN di-
ode pairs constructed in opposing configurations.
The package is sealed with a non-conductive epoxy
resin and is suitable for surface mount applications.
Applications
The MA44781 Device is well suited for MRI Passive
switching applications. The PIN Diodes become high
Q, R-C elements under small signal and
behave as effective passive rectifiers or short
circuits under high RF Signal to tune and de-tune the
resonant MRI tank circuit. The anti-parallel
doublet arrangement provides for more efficient RF
power handling.
Absolute Maximum Ratings @ TA=+25 °C
(Unless Otherwise Noted)
1
1. Operation of this device above any one of these parameters
may cause permanent damage.
2. Please refer to application note M538 for surface mounting
instructions
3. Total current per diode= I (rms) + I (dc) @ +25C
Parameter
Absolute Maximum
Reverse Voltage
60V
Forward Current (per each diode)
100 mA
3
Operating Temperature
-55 °C to +125 °C
Storage Temperature
-55 °C to +125 °C
Total Power Dissipation
2
250 mW
Electrical Specifications @ TA = +25 °C
Breakdown Voltage @ IR = 10μA, Vb = 60V Minimum
Part Num-
ber
Junction Capaci-
tance (per diode)
Forward Voltage
Delta Forward Voltage
Total Capacitance
f=1MHz Vr=-6.0V
If = 20uA
If=20uA
(between each diodes)
Vr=0V
(pF)
(V)
(mV)
(pF)
MA44781
0.15-0.50pF
0.500-0.780
+/-30mV
1.5-3.5
Internal Construction
Schematic
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