The MAX5963 is capable of being powered through
PWR or through channel A or B. Pull ENZ low and apply
a voltage to either channel to power the device. In this
mode, BP is powered by V
PS
according to Table 3.
Fast-Off/Slow-On (FOSO) Protection
GATE1A, GATE2A, GATE1B, and GATE2B immediately
pull low when FOSO exceeds the 1.24V (typ) threshold.
The MAX5963 waits for the 1s (typ) turn-on delay once
FOSO falls below the threshold hysteresis before allow-
ing either channel to turn back on. See the FireWire
Power Management section for more information.
Applications Information
Startup Considerations
Set the appropriate current-limit threshold for success-
ful startup. A successful startup is dependent on the
MAX5963 current-limit threshold and timeout period. A
large capacitor at the output results in a charging cur-
rent equivalent to the current-limit threshold and may
cause the MAX5963 to exceed its 1ms (typ) default
timeout period if the current-limit threshold is set too
low. Use the following formula to compute the minimum
current-limit setting:
where I
CL_LIMIT
is the programmed current limit, C
OUT
is the capacitor at OUT_, V
PS
is the supply voltage, t
CL
is the adjustable current-limit timeout period, and I
LOAD
is the load current during startup. With V
PS
= 12V,
C
OUT
= 220礔, t
CL
= 1ms, and I
LOAD
= 0, set the
MAX5963 current limit greater than 2.6A. This calcula-
tion does not include tolerances.
Choosing R
SENSE_
Select sense resistors, R
SENSEA
and R
SENSEB
, which
cause the circuit-breaker voltage drop at a current-
limit/circuit-breaker level above the maximum normal
operating current. Typically, set the current limit at 1.2
to 1.5 times the nominal load current.
Choose the sense resistor power rating to accommo-
date a current-limit condition:
P
SENSE_
= (V
CB_TH
)
2
/R
SENSE_
where P
SENSE_
is the power dissipated across R
SENSE_
during a current-limit/circuit-breaker fault.
MOSFET Selection
Select external MOSFETs according to the application
current level. The MOSFETs on-resistance (R
DS(ON)
)
should be chosen low enough to have minimum voltage
drop at full load to limit the MOSFET power dissipation.
High R
DS(ON)
also causes large output ripple if there is a
pulsating load. Determine the device power rating to
accommodate a short-circuit condition on the board, at
startup, and when the device is in autoretry mode. During
normal operation, the external MOSFETs dissipate little
power. The power dissipated in normal operation is:
P = I
LOAD
2
x R
DS(ON)
The most power dissipation occurs during a current-
limit event, resulting in high power dissipated in Q_ dur-
ing the current-limit period for the MAX5963. Calculate
the power dissipated across Q_ during this period
using the following equation:
P
Q__
= (V
PS
- V
SENSE_
) x I
CL_LIMIT
where V
SENSE_
is the voltage across the current-sense
resistor, R
SENSE_
, V
PS
is the input voltage and I
CL_LIMIT
is the programmed current limit. Though there are two
MOSFETs in series at the outputs, the safest assump-
tion is that all of the current-limiting power dissipation
occurs in one of the two MOSFETs; perfect sharing of
the current-limit voltage drop is unlikely.
I
C    x V
t
I
CL_LIMIT
OUT    PS
CL
LOAD
>
+
Dual, 7.5V to 76V, Hot-Swap and
Diode ORing Controller
______________________________________________________________________________________   17
Table 3. BP Voltage in Standby Mode
PWR AND PS CONFIGURATION
ENZ
PS_UVLO
V
BP
(V)
V
PS
> V
PWR
- 0.1V
Low
High
V
PS
- 0.7V
V
PS
> V
PWR
- 0.1V
Low
Low
V
PS
V
PS
< V
PWR
- 0.1V
Low
Low
V
PS
V
PS
< V
PWR
- 0.1V
High*
Low
V
PS
V
PS
< V
PWR
- 0.1V
High*
High
V
PWR
*ENX or ENY must be high to turn on GATEPS.