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參數資料
| 型號： | MB81ES653225-12 |
| 廠商： | Fujitsu Limited |
| 英文描述： | Consumer/Embedded Application Specific Memory for SiP |
| 中文描述： | 消費/嵌入式SIP應用程序特定的內存 |
| 文件頁數： | 24/44頁 |
| 文件大小： | 485K |
| 代理商： | MB81ES653225-12 |
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MB81ES653225-12/-12L
24
■
ABSOLUTE MAXIMUM RATINGS
WARNING:
Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■
RECOMMENDED OPERATING CONDITIONS
*3 : The maximum junction temperature of FCRAM (Tj) should not be more than 100
°
C.
Tj is represented by the power consumption of FCRAM (P
FCRAM
) and Logic LSI (PD) , the thermal resistance
of the package (
θ
ja) , and the maximum ambient temperature of the SiP (Tamax) .
Σ
pmax[W]
=
P
FCRAM
+
PD
Tjmax[
°
C]
=
Tamax[
°
C]
+
θ
ja[
°
C/W]
×
Σ
pmax[W]
WARNING:
The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
Parameter
Symbol
Rating
Unit
Min
0.5
0.5
50
55
Max
+
3.0
+
3.0
+
50
1.0
+
125
Supply Voltage Relative to V
SS
Voltage at Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Storage Temperature
V
DD
, V
DDQ
V
IN
, V
OUT
I
OUT
P
D
T
STG
V
V
mA
W
°
C
Parameter
Symbol
Value
Typ
1.8
0
Unit
Min
1.65
0
Max
1.95
0
Supply Voltage
V
DD
, V
DDQ
V
SS
, V
SSQ
V
IH
V
IL
V
V
V
V
Input High Voltage *
1
Input Low Voltage *
2
Ambient
Temperature
V
DDQ
×
0.8
0 .3
0
25
0
25
V
DDQ
+
0.3
V
DDQ
×
0.2
+
85
+
85
+
100
+
100
MB81ES653225-12
MB81ES653225-12L
MB81ES653225-12
MB81ES653225-12L
Ta
°
C
°
C
°
C
°
C
Junction
Temperature *
3
Tj
3.0 V
V
IH
V
IH
Min
V
IL
1.0 V
V
IL
V
IH
V
IL
Max
*1 : Overshoot limit :
V
IH
(Max)
=
3.0 V for pulse width
≤
5 ns,
pulse width measured at 50
%
of pulse amplitude.
*2 : Undershoot limit :
V
IL
(Min)
=
V
SSQ
1.0 V for pulse width
≤
5 ns,
pulse width measured at 50
%
of pulse amplitude.
50
%
of pulse amplitude
Pulse width
≤
5 ns
50
%
of pulse amplitude
Pulse width
≤
5 ns
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