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參數(shù)資料
型號(hào): MB84VP24491HK-70PBS
廠商: Fujitsu Limited
英文描述: RES NET BUSSED 150 OHM 6-SIP
中文描述: 128M的(x16)的快閃記憶體32M的(x16)的移動(dòng)FCRAMTM
文件頁(yè)數(shù): 11/70頁(yè)
文件大小: 1272K
代理商: MB84VP24491HK-70PBS
MB84VP24491HK
-70
10
(Continued)
*1:The I
CC
current listed includes both the DC operating current and the frequency dependent component.
*2:I
CC
active while Embedded Algorithm (program or erase) is in progress.
*3:Automatic sleep mode enables the low power mode when address remains stable for 150 ns.
*4:Applicable for only V
CC
f applying.
*5:Embedded Algorithm (program or erase) is in progress. (@5 MHz)
*6: V
CC
indicates lower of V
CC
f or V
CC
r.
*7: FCRAM Characteristics are measured after following POWER-UP timing.
*8: I
OUT
depends on the output load conditions.
Parameter
Sym-
bol
Conditions
Value
Unit
Min
Typ
Max
Input Low Level
V
IL
–0.3
V
CC
×
0.2 *
6
V
CC
+ 0.2 *
6
V
Input High Level
V
IH
V
CC
×
0.8
V
Voltage for Sector Protection, and
Temporary Sector Unprotection
(RESET) *
4
V
ID
11.5
12
12.5
V
Voltage for WP/ACC Sector
Protection/Unprotection and
Program Acceleration *
4
V
ACC
8.5
9.0
9.5
V
Output Low Voltage Level
V
OL
f
V
CC
f = V
CC
f Min,
I
OL
= 0.1 mA
Flash
V
CC
f
×
0.15
V
V
OL
r
V
CC
r = V
CC
r Min,
I
OL
= 1.0 mA
FCRAM
0.4
V
Output High Voltage Level
V
OH
f
V
CC
f = V
CC
f Min,
I
OH
= –0.1 mA
Flash
V
CC
f
×
0.85
V
V
OH
r
V
CC
r = V
CC
r Min,
I
OH
= –0.5 mA
FCRAM
2.4
V
Flash Low V
CC
f Lock-Out Voltage
V
LKO
2.3
2.4
2.5
V
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