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參數(shù)資料
型號(hào): MBM30LV0064-PFTR
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 64M (8M X 8) BIT NAND-type
中文描述: 8M X 8 FLASH 3.3V PROM, 7000 ns, PDSO40
封裝: 0.80 MM PITCH, PLASTIC, REVERSE, TSOP2-44/40
文件頁(yè)數(shù): 25/43頁(yè)
文件大小: 397K
代理商: MBM30LV0064-PFTR
MBM30LV0064
25
Figure 18 Sequential Read (1) Timing Diagram
Note: The CE signal must stay “Low” after the third address input and during Busy state.
00h
N+1
0
1
2
CLE
CE
WE
ALE
I/O0
to I/O7
R/B
RE
**
N+2
N
**
t
R
t
R
Column
Address
N
Page
Address
M
Page M
Access
**: SE = GND input : D
OUT
527
= V
CC
input : D
OUT
511
: V
IH
or V
IL
A
0
to
A
7
A
9
to
A
16
A
17
to
A
22
= V
input : D
511
01h
0
1
2
CLE
CE
WE
ALE
I/O0
to I/O7
R/B
RE
**
**
t
R
t
R
Page M
Access
**: SE = GND input : D
OUT
527
Page M + 1
Access
256
+
N
256
+
N + 1
256
+
N + 2
: V
IH
or V
IL
A
0
to
A
7
A
9
to
A
16
A
17
to
A
22
Column
Address
N
Page
Address
M
Figure 19 Sequential Read (2) Timing Diagram
Note: The CE signal must stay “Low” after the third address input and during Busy state.
相關(guān)PDF資料
PDF描述
MBM30LV0032 32M (4M X 8) BIT NAND-type
MBM30LV0032-PFTN 32M (4M X 8) BIT NAND-type
MBM30LV0032-PFTR RES 150-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA
MBM30LV0064 64M (8M X 8) BIT NAND-type
MBM30LV0128 RES 1.5K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA
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