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參數資料
| 型號： | MBT2222 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N TRANSISTORS |
| 中文描述： | 硅外延平面晶體管NPN晶體管 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 39K |
| 代理商： | MBT2222 |
1P
1B
MBT222A
MBT222
marking
P / N
THERMAL CHARACTERISTICS
R
th j-a
500
K/W
Symbol
Descriptions
Max.
Min.
Typ.
Unit
Pulse Test 300 S, Duty Cycle. 2%
TEL:(852)23413351 FAX:(852)27978275
WEB SITE:http://www.daiwahk.com
MBT2222
MBT2222A
MBT222/MBT222A
SILICON PLANAR EPITAXIAL TRANSISTORS
N-P-N TRANSISTORS
Type
SOT-23
1. BASE
2. COLLECTOR
3. EMITTER
Color Code
Black
Marking
MBT222/MBT222A
ABSOLUTE MAXIMUM RATINGS
Symbol
Min.
T
T
P
V
V
V
I
j
tot
CBO
CEO
EBO
C
stg
55
Descriptions
Storage Temperature
Junction Temperature
Maximum Power Dissipation (Ta=25 )
Maximum Collector to Base Voltage
Maximum Collector to Emitter Voltage
Maximum Collector Current
Maximum Emitter to Base Voltage
C
Max.
Typ.
Unit
150
150
250
600
60/75
30/40
5.0/6.0
mW
C
V
V
V
mA
C
ELECTRICAL CHARACTERISTICS Ta 25
( )
Descriptions
Max.
Unit
300
DC Current Gain
Symbol
h
h
h
FE6
FE5
FE4
h
FE3
h
FE2
h
FE1
Typ.
Min.
30/40
50
35
100
50
75
Test Conditions
V
I
CE
C
10V,
0.1mA
V
I
CE
C
10V,
1mA
V
V
I
I
CE
C
10V,
150mA
V
I
CE
C
1V,
150mA
V
I
CE
C
10V,
500mA
CE
C
10V,
10mA
nA
uA
nA
nA
mV
10
10
20
(MBT222A)
Collector Cut-off Current (MBT222A)
Emitter Cut-off Current (MBT222A)
I
I
V
V
EBO
CE Sat
CE Sat
( )
( )
I
CBO
I
CBO
CEX
30/25
Input Capacitance
C
ib
Output Capacitance
8.0
P
P
C
F
F
ob
0.01
0.01
uA
(MBT222)
Gain Bandwidth product
250/300
MHz
f
T
V
V
EB
V
CB
EB
V,
V
I
C
0,
V
EB
3V
60mA,
I
E
I
E
0mA
V
V
CE
V
CB
V
CE
V,
I
C
mA,
V,
I
f
f
E
I
C
mA,
MHz
MHz
CB
50V,
0mA
V,
mA
V
V
V
V
V
Collector to Emitter Breakdown Voltage
30/40
60/75
( )
BE Sat
( )
BE Sat
V
V
1.6/1.0
2.6/2.0
V
Collector Saturation Voltage
400/300
1.3/0.6to1.2
Base Saturation Voltage
Base Current (MBT222A)
I
BEX
I
C
I
C
1.0mA
I
C
0
I
C
100mA,
I
B
0
500mA,
I
B
50mA
I
I
C
I
C
500mA,
I
B
50mA
150mA,
I
B
15mA
C
150mA,
I
B
15mA,
V
V
EB
CE
3V,
60V
375
300
225
Small Signal Current Gain
h
FE
50
75
ns
ns
Storage Time
t
h
stg
FE
25
10
ns
ns
t
f
t
d
Delay Time
Rise Time
60
Fall Time
t
f
Emitter to Base Breakdown Voltage
5.0/6.0
BV
BV
BV
EBO
CEO
CEO
V
CE
10V,
I
C
1.0mA,
V
CE10mA,
I
C
10mA,
I
C
150mA
I
I
C
I
C
I
C
150mA
150mA
C
150mA
f
f
1kHz
1kHz
0mA,
I
E
10uA
1
2
3
Thermal Resistance at T P R +R +R +T
( )
j
th j-t
th t-s
th s-a
amb
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| MBT2222ADW1T1 | 功能描述:兩極晶體管 - BJT 600mA 75V Dual NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT2222ADW1T1G | 功能描述:兩極晶體管 - BJT 600mA 75V Dual NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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