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參數資料
| 型號： | MCM6323AYJ15R |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | ER 3C 3#12 PIN PLUG RoHS Compliant: No |
| 中文描述： | 64K X 16 STANDARD SRAM, 15 ns, PDSO44 |
| 封裝： | 0.400 INCH, SOJ-44 |
| 文件頁數： | 7/12頁 |
| 文件大小： | 181K |
| 代理商： | MCM6323AYJ15R |
MCM6323A
7
MOTOROLA FAST SRAM
WRITE CYCLE 1
(W Controlled, See Notes 1 and 2)
Parameter
Symbol
b l
MCM6323A–10
MCM6323A–12
MCM6323A–15
U i
Unit
Notes
Min
Max
Min
Max
Min
Max
Write Cycle Time
tAVAV
tAVWL
tAVWH
tWLWH,
tWLEH
10
—
12
—
15
—
ns
3
Address Setup Time
0
—
0
—
0
—
ns
Address Valid to End of Write
8
—
9
—
10
—
ns
Write Pulse Width
8
—
9
—
10
—
ns
Byte Pulse Width
tBLWH,
tBLEH
8
—
9
—
10
—
ns
Data Valid to End of Write
tDVWH
tWHDX
tWLQZ
tWHQX
tWHAX
4
—
5
—
6
—
ns
Data Hold Time
0
—
0
—
0
—
ns
Write Low to Data High–Z
0
4
0
5
0
6
ns
4, 5, 6
Write High to Output Active
3
—
3
—
3
—
ns
4, 5, 6
Write Recovery Time
0
—
0
—
0
—
ns
NOTES:
1. A write occurs during the overlap of E low, W low, and LB and/or UB low.
2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles.
3. All write cycle timings are referenced from the last valid address to the first transitioning address.
4. Transition is measured 200 mV from steady–state voltage.
5. At any given voltage and temperature, tWLQZ max < tWHQX min both for a given device and from device to device.
6. This parameter is sampled and not 100% tested.
WRITE CYCLE 1
(W Controlled)
DATA VALID
tDVWH
tAVWL
tAVWH
tAVAV
tWHAX
tWLWH
tWHDX
tWLQZ
tWHQX
HIGH–Z
HIGH–Z
A (ADDRESS)
W (WRITE ENABLE)
E (CHIP ENABLE)
Q (DATA OUT)
D (DATA IN)
tWLEH
tBLWH
LB, UB (BYTE ENABLE)
tBLEH
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