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參數資料
型號: MCM6323AYJ15R
廠商: MOTOROLA INC
元件分類: DRAM
英文描述: ER 3C 3#12 PIN PLUG RoHS Compliant: No
中文描述: 64K X 16 STANDARD SRAM, 15 ns, PDSO44
封裝: 0.400 INCH, SOJ-44
文件頁數: 8/12頁
文件大小: 181K
代理商: MCM6323AYJ15R
MCM6323A
8
MOTOROLA FAST SRAM
WRITE CYCLE 2
(E Controlled, See Notes 1 and 2)
Parameter
Symbol
b l
MCM6323A–10
MCM6323A–12
MCM6323A–15
U i
Unit
Notes
Min
Max
Min
Max
Min
Max
Write Cycle Time
tAVAV
tAVEL
tAVEH
tELEH,
tELWH
10
12
15
ns
3
Address Setup Time
0
0
0
ns
Address Valid to End of Write
8
9
10
ns
Enable to End of Write
8
9
10
ns
4, 5
Data Valid to End of Write
tDVEH
tEHDX
tEHAX
4
5
6
ns
Data Hold Time
0
0
0
ns
Write Recovery Time
0
0
0
ns
NOTES:
1. A write occurs during the overlap of E low, W low, and LB and/or UB low.
2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles.
3. All write cycle timings are referenced from the last valid address to the first transitioning address.
4. If E goes low coincident with or after W goes low, the output will remain in a high impedance condition.
5. If E goes high coincident with or before W goes high, the output will remain in a high impedance condition.
WRITE CYCLE 2
(E Controlled)
tEHDX
tDVEH
tEHAX
tELWH
tELEH
tAVEL
tAVEH
DATA VALID
tAVAV
HIGH–Z
A (ADDRESS)
W (WRITE ENABLE)
E (CHIP ENABLE)
Q (DATA OUT)
D (DATA IN)
LB, UB (BYTE ENABLE)
相關PDF資料
PDF描述
MCM6323ATS10 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM
MCM6323ATS10R 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM
MCM6323ATS12 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM
MCM6323ATS12R 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM
MCM6323ATS15 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM
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