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參數資料
| 型號： | MCM63F733ATQ10R |
| 廠商： | MOTOROLA INC |
| 元件分類： | SRAM |
| 英文描述： | ER 2C 2#16S PIN RECP |
| 中文描述： | 128K X 32 CACHE SRAM, 10 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數： | 7/16頁 |
| 文件大?。?/td> | 234K |
| 代理商： | MCM63F733ATQ10R |
MCM63F733A
7
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS: 2.5 V I/O Supply
(Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
VDDQ
VIL
VIH
VIH2
VOL
VOH
3.135
3.3
3.6
V
I/O Supply Voltage
2.375
2.5
2.9
V
Input Low Voltage
– 0.3
—
0.7
V
Input High Voltage
1.7
—
VDD + 0.3
VDDQ + 0.3
0.7
V
Input High Voltage (I/O Pins)
1.7
—
V
Output Low Voltage (IOL = 2 mA)
Output High Voltage (IOH = – 2 mA)
—
—
V
1.7
—
—
V
RECOMMENDED OPERATING CONDITIONS: 3.3 V I/O Supply
(Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
VDDQ
VIL
VIH
VIH2
VOL
VOH
3.135
3.3
3.6
V
I/O Supply Voltage
3.135
3.3
VDD
0.8
V
Input Low Voltage
– 0.5
—
V
Input High Voltage
2
—
VDD + 0.5
VDDQ + 0.5
0.4
V
Input High Voltage (I/O Pins)
2
—
V
Output Low Voltage (IOL = 8 mA)
Output High Voltage (IOH = – 4 mA)
—
—
V
2.4
—
—
V
VIH
20% tKHKH (MIN)
VSS
VSS – 1.0 V
Figure 1. Undershoot Voltage
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MCM63F733ATQ11 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM63F733ATQ11R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM63F737K | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow–Through BurstRAM Synchronous Fast Static RAM |
| MCM63F737KTQ11 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow–Through BurstRAM Synchronous Fast Static RAM |
| MCM63F737KTQ11R | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow–Through BurstRAM Synchronous Fast Static RAM |
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