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參數資料
型號: MCM63F733ATQ10R
廠商: MOTOROLA INC
元件分類: SRAM
英文描述: ER 2C 2#16S PIN RECP
中文描述: 128K X 32 CACHE SRAM, 10 ns, PQFP100
封裝: TQFP-100
文件頁數: 8/16頁
文件大小: 234K
代理商: MCM63F733ATQ10R
MCM63F733A
8
MOTOROLA FAST SRAM
SUPPLY CURRENTS
Parameter
Symbol
Min
Typ
Max
Unit
Notes
Input Leakage Current (0 V
Vin
VDD)
Output Leakage Current (0 V
Vin
VDDQ)
AC Supply Current (Device Selected,
All Outputs Open, Freq = Max)
Includes VDD Only
Ilkg(I)
Ilkg(O)
IDDA
±
1
μ
A
1, 2
±
1
μ
A
MCM63F733A–10
MCM63F733A–11
TBD
mA
3, 4, 5
CMOS Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, All Inputs Static at CMOS Levels)
ISB2
TBD
mA
6, 8
Sleep Mode Supply Current (Sleep Mode, Freq = Max,
VDD = Max, All Other Inputs Static at CMOS Levels,
ZZ
VDD – 0.2 V)
IZZ
2
mA
2, 7, 8
TTL Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, All Inputs Static at TTL Levels)
ISB3
TBD
mA
6, 9
Clock Running (Device Deselected,
Freq = Max, VDD = Max, All Inputs
Toggling at CMOS Levels)
MCM63F733A–10
MCM63F733A–11
ISB4
TBD
mA
3, 4,
5, 6, 8
Static Clock Running (Device Deselected,
Freq = Max, VDD = Max, All Inputs
Static at TTL Levels)
MCM63F733A–10
MCM63F733A–11
ISB5
TBD
mA
6, 9
NOTES:
1. LBO pin has an internal pullup and will exhibit leakage currents of
±
5
μ
A.
2. ZZ pin has an internal pulldown and will exhibit leakage currents of
±
5
μ
A.
3. Reference AC Operating Conditions and Characteristics for input and timing.
4. All addresses transition simultaneously low (LSB) then high (MSB).
5. Data states are all zero.
6. Device is deselected as defined by the Truth Table.
7. Device in Sleep Mode as defined by the Asynchronous Truth Table.
8. CMOS levels for I/Os are VIT
VSS + 0.2 V or
VDDQ – 0.2 V. CMOS levels for other inputs are Vin
VSS + 0.2 V or
VDD – 0.2 V.
9. TTL levels for I/Os are VIT
VIL or
VIH2. TTL levels for other inputs are Vin
VIL or
VIH.
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 0 to 70
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Min
Typ
Max
Unit
Input Capacitance
Cin
CI/O
4
5
pF
Input/Output Capacitance
7
8
pF
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MCM63F733ATQ11 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM63F733ATQ11R 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM63F737K 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow–Through BurstRAM Synchronous Fast Static RAM
MCM63F737KTQ11 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow–Through BurstRAM Synchronous Fast Static RAM
MCM63F737KTQ11R 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow–Through BurstRAM Synchronous Fast Static RAM
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