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參數(shù)資料
型號: MCM63P531TQ7
廠商: MOTOROLA INC
元件分類: DRAM
英文描述: Replaced by PTH12000W :
中文描述: 32K X 32 CACHE SRAM, 7 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 10/27頁
文件大小: 328K
代理商: MCM63P531TQ7
MCM63P636
10
MOTOROLA FAST SRAM
CAPACITANCE AND INDUCTANCE
(See Notes 1, 2, and 3)
Pi D
Pin Description
TQFP
PBGA
Capacitance (pF)
Inductance (nH)
Capacitance (pF)
Inductance (nH)
Min
Max
Min
Max
Min
Max
Min
Max
I/O Pins
5
7
2
10
5.5
7.5
2.5
4.5
Data Strobe Pins
5
7
2
10
5.5
7.5
2.5
4.5
Input Pins
3
5
2
10
3.5
5.5
2.5
4
ADS Pin
5
7
2
10
5.5
7.5
2.5
4.5
K and SK Pins
3.5
4.5
2
10
4
5
1.5
3
TCK Boundary Scan Pin
5
Boundary Scan Input Pins
8
TDO Boundary Scan Pin
8
NOTES:
1. Parameters are periodically sampled rather than 100% tested.
2. Capacitance variation part to part on the same pin is
±
0.25 pF.
3. Inductance variation part to part on the same pin is
±
1 nH.
AC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V
±
200 mV, Unless Otherwise Noted)
AC TEST CONDITIONS
Parameter
Value
Unit
Input Timing Reference Level
VDDQ/2
0 to 2.0
V
Input Pulse Levels
V
Input Rise/Fall Time (20 to 80%)
1
V/ns
Output Timing Reference Level
VDDQ/2
115
115
115
V
Die Temperature
TJ–250
TJ–225
TJ–200
°
C
OUTPUT
RL
Figure 4. AC Output Test Load
Z0 = 50
1.0 V
Figure 5. Lumped Capacitive Load and Typical Derating Curve
(TBD)
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