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參數資料
型號: MCM64PC32T
廠商: Motorola, Inc.
英文描述: 256K/512K Pipelined BurstRAM Secondary Cache Module for Pentium
中文描述: 256K/512K流水線BurstRAM二級高速緩存模塊奔騰
文件頁數: 7/16頁
文件大小: 167K
代理商: MCM64PC32T
MCM64PC32T
MCM64PC64T
7
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TJ = 20 to + 110
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
(Voltages referenced to VSS = 0 V)
Parameter
Symbol
Min
Max
Unit
Notes
Supply Voltage (Operating Voltage Range)
VDD
VIH
VIL
3.135
3.6
V
1
Input High Voltage
2.0
VDD + 0.3
0.8
V
2
Input Low Voltage
– 0.5
V
3
NOTES:
1. JEDEC specification 8–1A specifies
±
0.3 V tolerance for VDD.
2. VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 1.4 V ac (pulse width
20 ns) for I
20.0 mA.
3. VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width
20 ns) for I
20.0 mA.
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Notes
Input Leakage Current (All Inputs, Vin = 0 to VDD3)
Output Leakage Current (CG = VIH)
TTL Output Low Voltage (IOL = + 8.0 mA)
TTL Output High Voltage (IOH = – 4.0 mA)
NOTES:
1. Champing diodes exist to VSS and VDD.
Ilkg(I)
Ilkg(O)
VOL
VOH
±
1.0
μ
A
±
1.0
μ
A
0.4
V
1
2.4
V
1
POWER SUPPLY CURRENTS
Parameter
Symbol
Max
Unit
AC Supply Current (CG = VIH, CCS = VIL, Iout = 0 mA, All Inputs = VIL or VIH,
VIL = 0.0 V and VIH
3.0 V, Cycle Time
tKHKH min)
AC Standby Current (CG = VIH, CCS = VIL, Iout = 0 mA, All Inputs = VIL or VIH,
VIL = 0.0 V and VIH
3.0 V, Cycle Time
tKHKH min)
MCM64PC32T
MCM64PC64T
IDDA
495
705
mA
MCM64PC32T
MCM64PC64T
ISB1
230
505
mA
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TJ = 20 to 110
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Max
Unit
Input Capacitance
MCM64PC32T
MCM64PC64T
Cin
21
31
pF
Input/Output Capacitance (DQ0 – DQ63)
MCM64PC32T
MCM64PC64T
CI/O
8
16
pF
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